IXTQ470P2 Todos los transistores

 

IXTQ470P2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTQ470P2

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 830 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 42 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4.5 V

Carga de compuerta (Qg): 88 nC

Resistencia drenaje-fuente RDS(on): 0.145 Ohm

Empaquetado / Estuche: TO3P

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IXTQ470P2 Datasheet (PDF)

1.1. ixtq470p2.pdf Size:89K _ixys

IXTQ470P2
IXTQ470P2

Advance Technical Information PolarP2TM VDSS = 500V IXTQ470P2 ID25 = 42A Power MOSFET ? ? RDS(on) ? ? ? 145m? ? ? ? ? trr(typ) = 400ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-3P Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C, RGS = 1M? 500 V G D VGSS Continuous 30 V S Tab VGSM Transient 40 V ID25 T

5.1. ixta460p2-ixtp460p2-ixtq460p2-ixth460p2.pdf Size:154K _ixys

IXTQ470P2
IXTQ470P2

PolarP2TM VDSS = 500V IXTA460P2 ID25 = 24A Power MOSFET IXTP460P2 ? ? RDS(on) ? ? ? 270m? ? ? ? ? IXTQ460P2 N-Channel Enhancement Mode trr(typ) = 400ns Avalanche Rated IXTH460P2 Fast Intrinsic Diode TO-220AB (IXTP) TO-263 AA (IXTA) TO-3P (IXTQ) G G S D G D S D (Tab) D (Tab) S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to

5.2. ixta42n25p ixtp42n25p ixtq42n25p.pdf Size:252K _ixys

IXTQ470P2
IXTQ470P2

IXTA 42N25P VDSS = 250 V PolarHTTM IXTP 42N25P ID25 = 42 A Power MOSFET ? ? IXTQ 42N25P RDS(on) ? 84 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 250 V S VDGR TJ = 25 C to 150 C; RGS = 1 M? 250 V (TAB) VGS Continuous 20 V TO-220 (IXTP) VGSM Transient 30 V ID25 TC = 25 C42 A IDM T

 5.3. ixtq480p2.pdf Size:89K _ixys

IXTQ470P2
IXTQ470P2

Advance Technical Information PolarP2TM VDSS = 500V IXTQ480P2 ID25 = 52A Power MOSFET ? ? RDS(on) ? ? ? 120m? ? ? ? ? trr(typ) = 400ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-3P Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C, RGS = 1M? 500 V G D VGSS Continuous 30 V S Tab VGSM Transient 40 V ID25 T

5.4. ixtq44n50p.pdf Size:148K _ixys

IXTQ470P2
IXTQ470P2

IXTQ 44N50P VDSS = 500 V PolarHVTM ID25 = 44 A Power MOSFET ? ? RDS(on) ? 140 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 500 V VGS Continuous 30 V VGSM Transient 40 V G ID25 TC = 25 C44 A D (TAB) IDM TC = 25 C, pulse width limited by TJM

 5.5. ixtp450p2 ixth450p2 ixtq450p2.pdf Size:111K _ixys

IXTQ470P2
IXTQ470P2

Advance Technical Information PolarP2TM VDSS = 500V IXTP450P2 ID25 = 16A Power MOSFET IXTQ450P2 ? ? RDS(on) ? ? ? 330m? ? ? ? ? IXTH450P2 trr(typ) = 400ns N-Channel Enhancement Mode Avalanche Rated TO-220AB (IXTP) Fast Intrinsic Diode G D Tab S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V TO-3P (IXTQ) VDGR TJ = 25C to 150C, RGS = 1M? 500 V VGSS Co

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