IXTQ50N28T Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTQ50N28T  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 340 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 280 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 180 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.066 Ohm

Encapsulados: TO3P

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IXTQ50N28T datasheet

 6.1. Size:230K  ixys
 ixta50n25t ixtq50n25t ixtp50n25t ixth50n25t.pdf pdf_icon

IXTQ50N28T

IXTA50N25T IXTQ50N25T Trench Gate VDSS = 250V IXTP50N25T IXTH50N25T ID25 = 50A Power MOSFET RDS(on) 60m N-Channel Enhancement Mode TO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ) G G D S S G D (Tab) D D (Tab) D (Tab) S TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C, RGS = 1M

 9.1. Size:186K  ixys
 ixta52p10p ixtp52p10p ixtq52p10p ixth52p10p.pdf pdf_icon

IXTQ50N28T

PolarPTM VDSS = - 100V IXTA52P10P ID25 = - 52A Power MOSFETs IXTP52P10P RDS(on) 50m IXTQ52P10P P-Channel Enhancement Mode Avalanche Rated IXTH52P10P TO-3P (IXTQ) TO-263 AA (IXTA) TO-220AB (IXTP) D G G G S D G S S D (Tab) D D (Tab) S Tab Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25 C to 150 C -100 V VDGR TJ = 2

 9.2. Size:168K  ixys
 ixtq52n30p ixtt52n30p.pdf pdf_icon

IXTQ50N28T

IXTQ52N30P VDSS = 300 V PolarHTTM IXTT52N30P ID25 = 52 A Power MOSFET RDS(on) 66 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C; RGS = 1 M 300 V VGSS Continuous 20 V VGSM Transient 30 V G ID25 TC = 25 C52 A D (TAB)

Otros transistores... IXTQ44P15T, IXTQ450P2, IXTQ460P2, IXTQ470P2, IXTQ480P2, IXTQ48N20T, IXTQ50N20P, IXTQ50N25T, 18N50, IXTQ52N30P, IXTQ52P10P, IXTQ60N10T, IXTQ60N20L2, IXTQ60N20T, IXTQ62N15P, IXTQ64N25P, IXTQ69N30P