IXTQ64N25P Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTQ64N25P  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 400 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 64 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 200 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.049 Ohm

Encapsulados: TO3P

  📄📄 Copiar 

 Búsqueda de reemplazo de IXTQ64N25P MOSFET

- Selecciónⓘ de transistores por parámetros

 

IXTQ64N25P datasheet

 ..1. Size:171K  ixys
 ixtq64n25p ixtt64n25p.pdf pdf_icon

IXTQ64N25P

VDSS = 250 V IXTQ 64N25P PolarHTTM ID25 = 64 A IXTT 64N25P Power MOSFET RDS(on) 49 m N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C; RGS = 1 M 250 V VGSS Continuous 20 V VGSM Transient 30 V G D ID25 TC = 25 C64 A (TAB

 9.1. Size:252K  ixys
 ixta62n15p ixtp62n15p ixtq62n15p.pdf pdf_icon

IXTQ64N25P

IXTA 62N15P VDSS = 150 V PolarHTTM IXTP 62N15P ID25 = 62 A Power MOSFET IXTQ 62N15P RDS(on) 40 m N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 150 V G S VDGR TJ = 25 C to 175 C; RGS = 1 M 150 V (TAB) VGS Continuous 20 V VGSM Transient 30 V TO-220 (I

 9.2. Size:169K  ixys
 ixtq69n30p ixtt69n30p.pdf pdf_icon

IXTQ64N25P

IXTQ69N30P VDSS = 300 V PolarHTTM IXTT69N30P ID25 = 69 A Power MOSFET RDS(on) 49 m N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C; RGS = 1 M 300 V VGSS Continuous 20 V VGSM Transient 30 V G D ID25 TC = 25 C69 A (TAB)

 9.3. Size:149K  ixys
 ixtt60n20l2-ixtq60n20l2-ixth60n20l2.pdf pdf_icon

IXTQ64N25P

Advance Technical Information Linear L2TM Power VDSS = 200V IXTT60N20L2 MOSFET w/ Extended ID25 = 60A IXTQ60N20L2 RDS(on) 45m FBSOA IXTH60N20L2 TO-268 (IXTT) N-Channel Enhancement Mode Avalanche Rated G S Tab Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 200 V TO-3P (IXTQ) VDGR TJ = 25 C to 150 C, RGS = 1M 200 V VGSS

MOSTRAR MÁS

Otros transistores... IXTQ50N25T, IXTQ50N28T, IXTQ52N30P, IXTQ52P10P, IXTQ60N10T, IXTQ60N20L2, IXTQ60N20T, IXTQ62N15P, 8N60, IXTQ69N30P, IXTQ69N30PM, IXTQ74N20P, IXTQ75N10P, IXTQ76N25T, IXTQ82N25P, IXTQ86N20T, IXTQ86N25T