IXTQ64N25P Todos los transistores

 

IXTQ64N25P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXTQ64N25P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 400 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 64 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 200 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.049 Ohm
   Paquete / Cubierta: TO3P
 

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IXTQ64N25P Datasheet (PDF)

 ..1. Size:171K  ixys
 ixtq64n25p ixtt64n25p.pdf pdf_icon

IXTQ64N25P

VDSS = 250 VIXTQ 64N25PPolarHTTMID25 = 64 AIXTT 64N25PPower MOSFET RDS(on) 49 m N-Channel Enhancement ModeAvalanche RatedTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 250 VVDGR TJ = 25 C to 150 C; RGS = 1 M 250 VVGSS Continuous 20 VVGSM Transient 30 VGDID25 TC = 25 C64 A(TAB

 9.1. Size:252K  ixys
 ixta62n15p ixtp62n15p ixtq62n15p.pdf pdf_icon

IXTQ64N25P

IXTA 62N15P VDSS = 150 VPolarHTTMIXTP 62N15P ID25 = 62 APower MOSFETIXTQ 62N15P RDS(on) 40 m N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 175 C 150 VGSVDGR TJ = 25 C to 175 C; RGS = 1 M 150 V(TAB)VGS Continuous 20 VVGSM Transient 30 VTO-220 (I

 9.2. Size:169K  ixys
 ixtq69n30p ixtt69n30p.pdf pdf_icon

IXTQ64N25P

IXTQ69N30P VDSS = 300 VPolarHTTMIXTT69N30P ID25 = 69 APower MOSFET RDS(on) 49 m N-Channel Enhancement ModeAvalanche RatedTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 300 VVDGR TJ = 25 C to 150 C; RGS = 1 M 300 VVGSS Continuous 20 VVGSM Transient 30 VGDID25 TC = 25 C69 A(TAB)

 9.3. Size:149K  ixys
 ixtt60n20l2-ixtq60n20l2-ixth60n20l2.pdf pdf_icon

IXTQ64N25P

Advance Technical InformationLinear L2TM Power VDSS = 200VIXTT60N20L2MOSFET w/ Extended ID25 = 60AIXTQ60N20L2 RDS(on) 45m FBSOAIXTH60N20L2TO-268 (IXTT)N-Channel Enhancement ModeAvalanche RatedGSTabSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 200 VTO-3P (IXTQ)VDGR TJ = 25C to 150C, RGS = 1M 200 VVGSS

MOSTRAR MÁS

Otros transistores... IXTQ50N25T , IXTQ50N28T , IXTQ52N30P , IXTQ52P10P , IXTQ60N10T , IXTQ60N20L2 , IXTQ60N20T , IXTQ62N15P , K2611 , IXTQ69N30P , IXTQ69N30PM , IXTQ74N20P , IXTQ75N10P , IXTQ76N25T , IXTQ82N25P , IXTQ86N20T , IXTQ86N25T .

History: SI4776DY | IXFT86N30T | IXTA96P085T | IRFS723 | ME70N03S-G | DH400P06F | IPB180N08S4-02

 

 
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