IXTT10N100D2 Todos los transistores

 

IXTT10N100D2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXTT10N100D2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 695 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1000 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Qgⓘ - Carga de la puerta: 200 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
   Paquete / Cubierta: TO268
     - Selección de transistores por parámetros

 

IXTT10N100D2 Datasheet (PDF)

 8.1. Size:124K  ixys
ixth10p50 ixtt10p50 ixth11p50 ixtt11p50.pdf pdf_icon

IXTT10N100D2
IXTT10N100D2

VDSS ID25 RDS(on)Standard Power MOSFETP-Channel Enhancement ModeIXTH/IXTT 10P50 -500 V -10 A 0.90 Avalanche RatedIXTH/IXTT 11P50 -500 V -11 A 0.75 TO-247 AD (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C -500 VVDGR TJ = 25C to 150C; RGS = 1 M -500 VVGS Continuous 20 V(TAB)VGSM Transient 30 VDID25 TC = 25C 10P50 -10 A11P50 -

 8.2. Size:274K  ixys
ixtk100n25p ixtt100n25p ixtq100n25p.pdf pdf_icon

IXTT10N100D2
IXTT10N100D2

IXTK 100N25P VDSS = 250 VPolarHTTMIXTQ 100N25P ID25 = 100 APower MOSFET IXTT 100N25P RDS(on) 27 m N-Channel Enhancement ModeAvalanche RatedTO-264 (IXTK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 250 VVDGR TJ = 25 C to 150 C; RGS = 1 M 250 VVGSS Continuous 20 VGD (TAB)DSVGSM Transient 30 VID

 9.1. Size:175K  ixys
ixtt12n150 ixth12n150.pdf pdf_icon

IXTT10N100D2
IXTT10N100D2

High Voltage VDSS = 1500VIXTT12N150ID25 = 12APower MOSFETIXTH12N150 RDS(on) 2.2 N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-268 (IXTT)GSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 1500 VD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 1500 VVGSS Continuous 30 VTO-247 (IXTH)VG

 9.2. Size:199K  ixys
ixth16n50d2 ixtt16n50d2.pdf pdf_icon

IXTT10N100D2
IXTT10N100D2

Advance Technical InformationDepletion Mode VDSX = 500VIXTH16N50D2MOSFET ID(on) > 16AIXTT16N50D2 RDS(on) 240m N-ChannelTO-247 (IXTH)GSymbol Test Conditions Maximum RatingsDD (Tab)SVDSX TJ = 25C to 150C 500 VVDGX TJ = 25C to 150C, RGS = 1M 500 VVGSX Continuous 20 VTO-268 (IXTT)VGSM Transient 30 VPD TC = 2

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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