IXTT110N10L2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IXTT110N10L2 Datasheet (PDF)

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IXTQ 110N10P VDSS = 100 VPolarHTTMIXTT 110N10P ID25 = 110 APower MOSFET RDS(on) 15 m N-Channel Enhancement ModeAvalanche RatedTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 175 C 100 VVDGR TJ = 25 C to 175 C; RGS = 1 M 100 VVGS Continuous 20 VVGSM Transient 30 VGDID25 TC = 25 C 110 A(T

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VDSS ID25 RDS(on)Standard Power MOSFETP-Channel Enhancement ModeIXTH/IXTT 10P50 -500 V -10 A 0.90 Avalanche RatedIXTH/IXTT 11P50 -500 V -11 A 0.75 TO-247 AD (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C -500 VVDGR TJ = 25C to 150C; RGS = 1 M -500 VVGS Continuous 20 V(TAB)VGSM Transient 30 VDID25 TC = 25C 10P50 -10 A11P50 -

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VDSS = -500 VStandard Power MOSFETID25 = -11 AP-Channel Enhancement ModeIXTH 11P50Avalanche RatedRDS(on) = 0.75 IXTT 11P50TO-247 AD (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C -500 VVDGR TJ = 25C to 150C; RGS = 1 M -500 VVGS Continuous 20 V(TAB)VGSM Transient 30 VDID25 TC = 25C -11 AIDM TC = 25C, p

Otros transistores... IXTR62N15P , IXTR90P10P , IXTR90P20P , IXTT100N25P , IXTT10N100D , IXTT10N100D2 , IXTT10P50 , IXTT10P60 , 50N06 , IXTT110N10P , IXTT11P50 , IXTT120N15P , IXTT12N140 , IXTT140N10P , IXTT16N10D2 , IXTT16N20D2 , IXTT16N50D2 .