IXTT11P50 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXTT11P50 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 300 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 11 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 500 nS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.75 Ohm
Encapsulados: TO268
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IXTT11P50 datasheet
..1. Size:124K ixys
ixth10p50 ixtt10p50 ixth11p50 ixtt11p50.pdf 
VDSS ID25 RDS(on) Standard Power MOSFET P-Channel Enhancement Mode IXTH/IXTT 10P50 -500 V -10 A 0.90 Avalanche Rated IXTH/IXTT 11P50 -500 V -11 A 0.75 TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C -500 V VDGR TJ = 25 C to 150 C; RGS = 1 M -500 V VGS Continuous 20 V (TAB) VGSM Transient 30 V D ID25 TC = 25 C 10P50 -10 A 11P50 -
..2. Size:573K ixys
ixth11p50 ixtt11p50.pdf
VDSS = -500 V Standard Power MOSFET ID25 = -11 A P-Channel Enhancement Mode IXTH 11P50 Avalanche Rated RDS(on) = 0.75 IXTT 11P50 TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C -500 V VDGR TJ = 25 C to 150 C; RGS = 1 M -500 V VGS Continuous 20 V (TAB) VGSM Transient 30 V D ID25 TC = 25 C -11 A IDM TC = 25 C, p
8.1. Size:170K ixys
ixtq110n10p ixtt110n10p.pdf
IXTQ 110N10P VDSS = 100 V PolarHTTM IXTT 110N10P ID25 = 110 A Power MOSFET RDS(on) 15 m N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGS Continuous 20 V VGSM Transient 30 V G D ID25 TC = 25 C 110 A (T
9.1. Size:175K ixys
ixtt12n150 ixth12n150.pdf
High Voltage VDSS = 1500V IXTT12N150 ID25 = 12A Power MOSFET IXTH12N150 RDS(on) 2.2 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 1500 V D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 1500 V VGSS Continuous 30 V TO-247 (IXTH) VG
9.2. Size:199K ixys
ixth16n50d2 ixtt16n50d2.pdf
Advance Technical Information Depletion Mode VDSX = 500V IXTH16N50D2 MOSFET ID(on) > 16A IXTT16N50D2 RDS(on) 240m N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings D D (Tab) S VDSX TJ = 25 C to 150 C 500 V VDGX TJ = 25 C to 150 C, RGS = 1M 500 V VGSX Continuous 20 V TO-268 (IXTT) VGSM Transient 30 V PD TC = 2
9.3. Size:166K ixys
ixtt170n10p ixtq170n10p ixtk170n10p.pdf
PolarTM VDSS = 100V IXTT170N10P ID25 = 170A Power MOSFET IXTQ170N10P RDS(on) 9m IXTK170N10P TO-268 (IXTT) N-Channel Enhancement Mode Avalanche Rated G S Tab TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C, RGS = 1M 100 V G D VGSS Continuous 20 V S Tab VGSM Transient
9.4. Size:171K ixys
ixtq140n10p ixtt140n10p.pdf
IXTQ 140N10P VDSS = 100 V PolarHTTM IXTT 140N10P ID25 = 140 A Power MOSFET RDS(on) 11 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C 140 A ID(RMS)
9.5. Size:174K ixys
ixth140p10t ixtt140p10t.pdf
Preliminary Technical Information TrenchPTM VDSS = -100V IXTT140P10T Power MOSFETs ID25 = -140A IXTH140P10T RDS(on) 12m P-Channel Enhancement Mode TO-268 (IXTT) Avalanche Rated G S D (Tab) Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25 C to 150 C -100 V VDGR TJ = 25 C to 150 C, RGS = 1M -100 V VGSS Continuous 15 V
9.6. Size:155K ixys
ixtt1n450hv.pdf
Advance Technical Information High Voltage VDSS = 4500V IXTT1N450HV Power MOSFET ID25 = 1A RDS(on) 85 N-Channel Enhancement Mode TO-268 (IXTT) G S Symbol Test Conditions Maximum Ratings D (Tab) VDSS TJ = 25 C to 150 C 4500 V VDGR TJ = 25 C to 150 C, RGS = 1M 4500 V G = Gate D = Drain S = Source Tab = Drain VGSS Continuous 20 V VGSM
9.7. Size:122K ixys
ixth12n150 ixtt12n150.pdf
High Voltage VDSS = 1500V IXTT12N150 ID25 = 12A Power MOSFETs IXTH12N150 RDS(on) 2 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 1500 V D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 1500 V VGSS Continuous 30 V TO-247 (IXTH) VGSM Transient
9.8. Size:172K ixys
ixth16n10d2 ixtt16n10d2.pdf
Advance Technical Information Depletion Mode VDSX = 100V IXTH16N10D2 MOSFET ID(on) > 16A IXTT16N10D2 RDS(on) 64m N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings D D (Tab) S VDSX TJ = 25 C to 150 C 100 V VDGX TJ = 25 C to 150 C, RGS = 1M 100 V VGSX Continuous 20 V VGSM Transient 30 V TO-268 (IXTT) PD TC = 25 C 695
9.9. Size:73K ixys
ixth1n100 ixtt1n100.pdf
Advance Technical Information VDSS = 1000 V IXTH 1N100 High Voltage MOSFET ID25 = 1.5 A IXTT 1N100 RDS(on) = 11 N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC
9.10. Size:208K ixys
ixth1n300p3hv ixtt1n300p3hv.pdf
Preliminary Technical Information High Voltage VDSS = 3000V IXTT1N300P3HV Power MOSFET ID25 = 1.00A IXTH1N300P3HV RDS(on) 50 N-Channel Enhancement Mode TO-268HV (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 3000 V TO-247HV (IXTH) VDGR TJ = 25 C to 150 C, RGS = 1M 3000 V VGSS
9.11. Size:142K ixys
ixtt12n150hv.pdf
High Voltage VDSS = 1500V IXTT12N150HV ID25 = 12A Power MOSFET RDS(on) 2.2 N-Channel Enhancement Mode Fast Intrinsic Diode TO-268HV G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 1500 V D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 1500 V G = Gate D = Drain VGSS Continuous 30 V
9.12. Size:274K ixys
ixtk100n25p ixtt100n25p ixtq100n25p.pdf
IXTK 100N25P VDSS = 250 V PolarHTTM IXTQ 100N25P ID25 = 100 A Power MOSFET IXTT 100N25P RDS(on) 27 m N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C; RGS = 1 M 250 V VGSS Continuous 20 V G D (TAB) DS VGSM Transient 30 V ID
9.13. Size:171K ixys
ixtq120n15p ixtt120n15p.pdf
IXTQ 120N15P VDSS = 150 V PolarHTTM IXTT 120N15P ID25 = 120 A Power MOSFET RDS(on) 16 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25 C to 175 C 150 V VDGR TJ = 25 C to 175 C; RGS = 1 M 150 V VDSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C 120 A G D
9.14. Size:152K ixys
ixtt1n250hv.pdf
Advance Technical Information High Voltage VDSS = 2500V IXTT1N250HV ID25 = 1.5A Power MOSFET RDS(on) 40 N-Channel Enhancement Mode Fast Intrinsic Diode TO-268S G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 2500 V G = Gate D = Drain S = Source Tab = Drain VDGR TJ = 25 C to 150 C, RGS = 1M 2500 V VGSS Contin
Otros transistores... IXTR90P20P, IXTT100N25P, IXTT10N100D, IXTT10N100D2, IXTT10P50, IXTT10P60, IXTT110N10L2, IXTT110N10P, IRFZ44, IXTT120N15P, IXTT12N140, IXTT140N10P, IXTT16N10D2, IXTT16N20D2, IXTT16N50D2, IXTT16P60P, IXTT170N10P
