IXTT11P50 Todos los transistores

 

IXTT11P50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXTT11P50
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 160 nC
   trⓘ - Tiempo de subida: 500 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.75 Ohm
   Paquete / Cubierta: TO268
     - Selección de transistores por parámetros

 

IXTT11P50 Datasheet (PDF)

 ..1. Size:124K  ixys
 ixth10p50 ixtt10p50 ixth11p50 ixtt11p50.pdf pdf_icon

IXTT11P50

VDSS ID25 RDS(on)Standard Power MOSFETP-Channel Enhancement ModeIXTH/IXTT 10P50 -500 V -10 A 0.90 Avalanche RatedIXTH/IXTT 11P50 -500 V -11 A 0.75 TO-247 AD (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C -500 VVDGR TJ = 25C to 150C; RGS = 1 M -500 VVGS Continuous 20 V(TAB)VGSM Transient 30 VDID25 TC = 25C 10P50 -10 A11P50 -

 ..2. Size:573K  ixys
 ixth11p50 ixtt11p50.pdf pdf_icon

IXTT11P50

VDSS = -500 VStandard Power MOSFETID25 = -11 AP-Channel Enhancement ModeIXTH 11P50Avalanche RatedRDS(on) = 0.75 IXTT 11P50TO-247 AD (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C -500 VVDGR TJ = 25C to 150C; RGS = 1 M -500 VVGS Continuous 20 V(TAB)VGSM Transient 30 VDID25 TC = 25C -11 AIDM TC = 25C, p

 8.1. Size:170K  ixys
 ixtq110n10p ixtt110n10p.pdf pdf_icon

IXTT11P50

IXTQ 110N10P VDSS = 100 VPolarHTTMIXTT 110N10P ID25 = 110 APower MOSFET RDS(on) 15 m N-Channel Enhancement ModeAvalanche RatedTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 175 C 100 VVDGR TJ = 25 C to 175 C; RGS = 1 M 100 VVGS Continuous 20 VVGSM Transient 30 VGDID25 TC = 25 C 110 A(T

 9.1. Size:175K  ixys
 ixtt12n150 ixth12n150.pdf pdf_icon

IXTT11P50

High Voltage VDSS = 1500VIXTT12N150ID25 = 12APower MOSFETIXTH12N150 RDS(on) 2.2 N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-268 (IXTT)GSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 1500 VD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 1500 VVGSS Continuous 30 VTO-247 (IXTH)VG

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AO8803 | FDC3612

 

 
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