IXTT140N10P Todos los transistores

Introduzca al menos 3 números o letras

IXTT140N10P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTT140N10P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 600 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Tensión umbral compuerta-fuente Vgs(th): 5 V

Corriente continua de drenaje (Id): 140 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 120 nS

Resistencia drenaje-fuente RDS(on): 0.011 Ohm

Empaquetado / Estuche: TO268

Búsqueda de reemplazo de MOSFET IXTT140N10P

 

IXTT140N10P Datasheet (PDF)

1.1. ixtq140n10p ixtt140n10p.pdf Size:171K _ixys

IXTT140N10P
IXTT140N10P

IXTQ 140N10P VDSS = 100 V PolarHTTM IXTT 140N10P ID25 = 140 A Power MOSFET ? ? RDS(on) ? 11 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 100 V VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C 140 A ID(RMS) External lead current limit 75 A

5.1. ixth1n100 ixtt1n100.pdf Size:73K _ixys

IXTT140N10P
IXTT140N10P

Advance Technical Information VDSS = 1000 V IXTH 1N100 High Voltage MOSFET ID25 = 1.5 A IXTT 1N100 ? RDS(on) = 11 ? ? ? ? N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 M? 1000 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25C 1.5 A IDM TC

5.2. ixth16n10d2 ixtt16n10d2.pdf Size:172K _ixys

IXTT140N10P
IXTT140N10P

Advance Technical Information Depletion Mode VDSX = 100V IXTH16N10D2 MOSFET ID(on) > 16A IXTT16N10D2 ≤ Ω RDS(on) ≤ 64mΩ ≤ Ω ≤ Ω ≤ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings D D (Tab) S VDSX TJ = 25°C to 150°C 100 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ 100 V VGSX Continuous ±20 V VGSM Transient ±30 V TO-268 (IXTT) PD TC = 25°C 695

5.3. ixth11p50 ixtt11p50.pdf Size:573K _ixys

IXTT140N10P
IXTT140N10P

VDSS = -500 V Standard Power MOSFET ID25 = -11 A P-Channel Enhancement Mode IXTH 11P50 Avalanche Rated ? RDS(on) = 0.75 ? ? ? ? IXTT 11P50 TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C -500 V VDGR TJ = 25C to 150C; RGS = 1 M? -500 V VGS Continuous 20 V (TAB) VGSM Transient 30 V D ID25 TC = 25C -11 A IDM TC = 25C, pulse width limited by T

5.4. ixtq120n15p ixtt120n15p.pdf Size:171K _ixys

IXTT140N10P
IXTT140N10P

IXTQ 120N15P VDSS = 150 V PolarHTTM IXTT 120N15P ID25 = 120 A Power MOSFET ? ? RDS(on) ? 16 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25 C to 175 C 150 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 150 V VDSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C 120 A G D (TAB) ID(RMS) External lead c

5.5. ixtk100n25p ixtt100n25p ixtq100n25p.pdf Size:274K _ixys

IXTT140N10P
IXTT140N10P

IXTK 100N25P VDSS = 250 V PolarHTTM IXTQ 100N25P ID25 = 100 A Power MOSFET ? ? IXTT 100N25P RDS(on)? 27 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 250 V VGSS Continuous 20 V G D (TAB) DS VGSM Transient 30 V ID25 TC = 25 C 100 A ID(RMS) Ex

5.6. ixth16n50d2 ixtt16n50d2.pdf Size:199K _ixys

IXTT140N10P
IXTT140N10P

Advance Technical Information Depletion Mode VDSX = 500V IXTH16N50D2 MOSFET ID(on) > 16A IXTT16N50D2 ? ? RDS(on) ? 240m? ? ? ? ? ? ? N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings D D (Tab) S VDSX TJ = 25C to 150C 500 V VDGX TJ = 25C to 150C, RGS = 1M? 500 V VGSX Continuous 20 V TO-268 (IXTT) VGSM Transient 30 V PD TC = 25C 695 W G TJ - 55 ... +150

5.7. ixth10p50 ixtt10p50 ixth11p50 ixtt11p50.pdf Size:124K _ixys

IXTT140N10P
IXTT140N10P

VDSS ID25 RDS(on) Standard Power MOSFET P-Channel Enhancement Mode IXTH/IXTT 10P50 -500 V -10 A 0.90 Ω Avalanche Rated IXTH/IXTT 11P50 -500 V -11 A 0.75 Ω TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ -500 V VGS Continuous ±20 V (TAB) VGSM Transient ±30 V D ID25 TC = 25°C 10P50 -10 A 11P50 -

5.8. ixtq110n10p ixtt110n10p.pdf Size:170K _ixys

IXTT140N10P
IXTT140N10P

IXTQ 110N10P VDSS = 100 V PolarHTTM IXTT 110N10P ID25 = 110 A Power MOSFET ? ? RDS(on) ? 15 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 100 V VGS Continuous 20 V VGSM Transient 30 V G D ID25 TC = 25 C 110 A (TAB) S ID(RMS) External lead cu

Otros transistores... IXTT10N100D2 , IXTT10P50 , IXTT10P60 , IXTT110N10L2 , IXTT110N10P , IXTT11P50 , IXTT120N15P , IXTT12N140 , IRFZ46N , IXTT16N10D2 , IXTT16N20D2 , IXTT16N50D2 , IXTT16P60P , IXTT170N10P , IXTT1N100 , IXTT20N50D , IXTT20P50P .

 


IXTT140N10P
  IXTT140N10P
  IXTT140N10P
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: IRLIZ44NPBF | IRLIZ44GPBF | IRLIZ34NPBF | IRLIZ34GPBF | IRLIZ24NPBF | IRLIZ14GPBF | IRLIB9343PBF | IRLIB4343 | IRLI640GPBF | IRLI630GPBF | IRLI620GPBF | IRLI540NPBF | IRLI540GPBF | IRLI540G | IRLI530GPBF |

Introduzca al menos 1 números o letras