IXTT24N50Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IXTT24N50Q Datasheet (PDF)

8.1. Size:337K ixys
ixtt240n15x4hv ixth240n15x4.pdf pdf_icon

Advance Technical InformationX4-Class VDSS = 150VIXTT240N15X4HVPower MOSFETTM ID25 = 240AIXTH240N15X4 RDS(on) 4.4m N-Channel Enhancement ModeAvalanche RatedTO-268HV (IXTT..HV)GSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 175C 150 V D (Tab)VDGR TJ = 25C to 175C, RGS = 1M 150 VTO-247 (IXTH)VGSS Cont

9.1. Size:202K ixys
ixth2n300p3hv ixtt2n300p3hv.pdf pdf_icon

Advance Technical InformationHigh Voltage VDSS = 3000VIXTT2N300P3HVPower MOSFETID25 = 2AIXTH2N300P3HV RDS(on) 21 TO-268HV (IXTT)N-Channel Enhancement ModeGS D (Tab)TO-247HV (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 3000 VVDGR TJ = 25C to 150C, RGS = 1M 3000 VVGSS Continuous 20 VV

9.2. Size:230K ixys
ixtt26n60p ixtv26n60p ixtv26n60ps ixth26n60p ixtq26n60p.pdf pdf_icon

IXTH26N60P VDSS = 600 VPolarHVTMIXTQ26N60P ID25 = 26 APower MOSFET IXTT26N60P RDS(on) 270 m N-Channel Enhancement ModeIXTV26N60PAvalanche RatedTO-247 (IXTH)IXTV26N60PSGDSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 600 V TO-3P (IXTQ)VDGR TJ = 25C to 150C; RGS = 1 M 600 VVGSS Continuous 30 VVGSM Tran

9.3. Size:338K ixys
ixtq26n50p ixtt26n50p ixtv26n50p.pdf pdf_icon

IXTQ 26N50P VDSS = 500 VPolarHVTMIXTT 26N50P ID25 = 26 APower MOSFET IXTV 26N50P RDS(on) 230 m IXTV 26N50PSN-Channel Enhancement ModeAvalanche RatedTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25 C to 150 C 500 VDS D (TAB)VDGR TJ = 25 C to 150 C; RGS = 1 M 500 VTO-268 (IXTT)VGSS Continuos 30 V