IXTT24N50Q Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTT24N50Q  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 360 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Id|ⓘ - Corriente continua de drenaje: 24 A

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 500 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.24 Ohm

Encapsulados: TO268

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IXTT24N50Q datasheet

 8.1. Size:337K  ixys
 ixtt240n15x4hv ixth240n15x4.pdf pdf_icon

IXTT24N50Q

Advance Technical Information X4-Class VDSS = 150V IXTT240N15X4HV Power MOSFETTM ID25 = 240A IXTH240N15X4 RDS(on) 4.4m N-Channel Enhancement Mode Avalanche Rated TO-268HV (IXTT..HV) G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 175 C 150 V D (Tab) VDGR TJ = 25 C to 175 C, RGS = 1M 150 V TO-247 (IXTH) VGSS Cont

 9.1. Size:202K  ixys
 ixth2n300p3hv ixtt2n300p3hv.pdf pdf_icon

IXTT24N50Q

Advance Technical Information High Voltage VDSS = 3000V IXTT2N300P3HV Power MOSFET ID25 = 2A IXTH2N300P3HV RDS(on) 21 TO-268HV (IXTT) N-Channel Enhancement Mode G S D (Tab) TO-247HV (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 3000 V VDGR TJ = 25 C to 150 C, RGS = 1M 3000 V VGSS Continuous 20 V V

 9.2. Size:230K  ixys
 ixtt26n60p ixtv26n60p ixtv26n60ps ixth26n60p ixtq26n60p.pdf pdf_icon

IXTT24N50Q

IXTH26N60P VDSS = 600 V PolarHVTM IXTQ26N60P ID25 = 26 A Power MOSFET IXTT26N60P RDS(on) 270 m N-Channel Enhancement Mode IXTV26N60P Avalanche Rated TO-247 (IXTH) IXTV26N60PS G D S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V TO-3P (IXTQ) VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V VGSS Continuous 30 V VGSM Tran

 9.3. Size:338K  ixys
 ixtq26n50p ixtt26n50p ixtv26n50p.pdf pdf_icon

IXTT24N50Q

IXTQ 26N50P VDSS = 500 V PolarHVTM IXTT 26N50P ID25 = 26 A Power MOSFET IXTV 26N50P RDS(on) 230 m IXTV 26N50PS N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 500 V D S D (TAB) VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V TO-268 (IXTT) VGSS Continuos 30 V

MOSTRAR MÁS

Otros transistores... IXTT16N10D2, IXTT16N20D2, IXTT16N50D2, IXTT16P60P, IXTT170N10P, IXTT1N100, IXTT20N50D, IXTT20P50P, IRFB4115, IXTT24P20, IXTT26N50P, IXTT26N60P, IXTT28N50Q, IXTT30N50L, IXTT30N50L2, IXTT30N50P, IXTT30N60L2