3SK29 Todos los transistores

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3SK29 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 3SK29

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.08 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 0.01 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Conductancia de drenaje-sustrato (Cd): 4 pF

Resistencia drenaje-fuente RDS(on): 200 Ohm

Empaquetado / Estuche: TO72

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3SK29 Datasheet (PDF)

1.1. 3sk291.pdf Size:185K _toshiba

3SK29
3SK29

3SK291 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK291 TV Tuner, UHF RF Amplifier Applications Unit: mm Superior cross modulation performance Low reverse transfer capacitance: C = 0.016 pF (typ.) rss Low noise figure: NF = 1.5dB (typ.) Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Drain-source voltage VDS 12.5 V Gate

1.2. 3sk292.pdf Size:151K _toshiba

3SK29
3SK29

3SK292 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK292 TV Tuner, VHF RF Amplifier Application Unit: mm Superior cross modulation performance. Low reverse transfer capacitance: C = 20 fF (typ.) rss Low noise figure: NF = 1.4dB (typ.) Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Drain-source voltage VDS 12.5 V Gate 1-s

1.3. 3sk294.pdf Size:150K _toshiba

3SK29
3SK29

3SK294 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK294 TV Tuner, VHF RF Amplifier Application Unit: mm Superior cross modulation performance Low reverse transfer capacitance: C = 20 fF (typ.) rss Low noise figure: NF = 1.4dB (typ.) Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Drain-source voltage VDS 12.5 V Gate 1-so

1.4. 3sk293.pdf Size:186K _toshiba

3SK29
3SK29

3SK293 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK293 TV Tuner, UHF RF Amplifier Applications Unit: mm Superior cross modulation performance Low reverse transfer capacitance: C = 16 fF (typ.) rss Low noise figure: NF = 1.5dB (typ.) Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Drain-source voltage VDS 12.5 V Gate 1-s

Otros transistores... 3SK193P , 3SK193Q , 3SK194 , 3SK202Q , 3SK202R , 3SK20HW , 3SK20HY , 3SK21H , 2SK3569 , 3SK32 , 3SK35 , 3SK37 , 3SK38 , 3SK38A , 3SK39 , 3SK40 , 3SK41 .

 


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