IXTT75N10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IXTT75N10
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 180 nC
   trⓘ - Tiempo de subida: 200 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: TO268

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IXTT75N10 Datasheet (PDF)

..1. Size:579K ixys
ixth67n10 ixtm67n10 ixth75n10 ixtm75n10 ixtt75n10.pdf

VDSS ID25 RDS(on)MegaMOSTMFETIXTH / IXTM 67N10100 V 67 A 25 mIXTH / IXTM 75N10100 V 75 A 20 mIXTT 75N10N-Channel Enhancement ModeTO-247 AD (IXTH)Symbol Test Conditions Maximum Ratings(TAB)VDSS TJ = 25C to 150C 100 VVDGR TJ = 25C to 150C; RGS = 1 M 100 VTO-204 AE (IXTM)VGS Continuous 20 VVGSM Transient 30

0.1. Size:139K ixys
ixth75n10l2 ixtt75n10l2.pdf

Advance Technical InformationLinearL2TM Power VDSS = 100VIXTH75N10L2MOSFET w/extended ID25 = 75AIXTT75N10L2 RDS(on) 21m FBSOADDDDO DON-Channel Enhancement ModeRGiGuaranteed FBSOAwwG OAvalanche RatedTO-247 (IXTH)OSSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 100 V DD (Tab)SVDGR TJ = 25

6.1. Size:583K ixys
ixth75n15 ixtt75n15.pdf

IXTH 75N15 VDSS = 150 VHigh CurrentIXTT 75N15 ID25 = 75 APower MOSFET RDS(on) = 23 mN-Channel Enhancement ModeTO-247 AD (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 150 VVDGR TJ = 25C to 150C; RGS = 1 M 150 VVGS Continuous 20 V(TAB)VGSM Transient 30 VID25 TC = 25C75 AIDM TC = 25C, pulse width limited by T

9.1. Size:170K ixys
ixtq74n20p ixtt74n20p.pdf

IXTQ 74N20P VDSS = 200 VPolarHTTMIXTT 74N20P ID25 = 74 APower MOSFET RDS(on) 34 m N-Channel Enhancement ModeAvalanche RatedTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 175 C 200 VVDGR TJ = 25 C to 175 C; RGS = 1 M 200 VVGSS Continuous 20 VVGSM Transient 30 VGDID25 TC = 25 C74 A(TAB

9.2. Size:112K ixys
ixtt72n10 ixth72n10.pdf

Advance Technical InformationIXTH 72N20 VDSS = 200 VHigh CurrentIXTT 72N20 ID25 = 72 APower MOSFET RDS(on) = 33 mN-Channel Enhancement ModeTO-247 AD (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 200 VVDGR TJ = 25C to 150C; RGS = 1 M 200 VVGS Continuous 20 V(TAB)VGSM Transient 30 VID25 TC = 25C72 AIDM TC =

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