IXTT75N10 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTT75N10  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 200 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm

Encapsulados: TO268

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IXTT75N10 datasheet

 ..1. Size:579K  ixys
 ixth67n10 ixtm67n10 ixth75n10 ixtm75n10 ixtt75n10.pdf pdf_icon

IXTT75N10

VDSS ID25 RDS(on) MegaMOSTMFET IXTH / IXTM 67N10 100 V 67 A 25 m IXTH / IXTM 75N10 100 V 75 A 20 m IXTT 75N10 N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings (TAB) VDSS TJ = 25 C to 150 C 100 V VDGR TJ = 25 C to 150 C; RGS = 1 M 100 V TO-204 AE (IXTM) VGS Continuous 20 V VGSM Transient 30

 0.1. Size:139K  ixys
 ixth75n10l2 ixtt75n10l2.pdf pdf_icon

IXTT75N10

Advance Technical Information LinearL2TM Power VDSS = 100V IXTH75N10L2 MOSFET w/extended ID25 = 75A IXTT75N10L2 RDS(on) 21m FBSOA D D D D O D O N-Channel Enhancement Mode RGi Guaranteed FBSOA w w G O Avalanche Rated TO-247 (IXTH) O S Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 100 V D D (Tab) S VDGR TJ = 25

 6.1. Size:583K  ixys
 ixth75n15 ixtt75n15.pdf pdf_icon

IXTT75N10

IXTH 75N15 VDSS = 150 V High Current IXTT 75N15 ID25 = 75 A Power MOSFET RDS(on) = 23 m N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 150 V VDGR TJ = 25 C to 150 C; RGS = 1 M 150 V VGS Continuous 20 V (TAB) VGSM Transient 30 V ID25 TC = 25 C75 A IDM TC = 25 C, pulse width limited by T

 9.1. Size:170K  ixys
 ixtq74n20p ixtt74n20p.pdf pdf_icon

IXTT75N10

IXTQ 74N20P VDSS = 200 V PolarHTTM IXTT 74N20P ID25 = 74 A Power MOSFET RDS(on) 34 m N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 200 V VDGR TJ = 25 C to 175 C; RGS = 1 M 200 V VGSS Continuous 20 V VGSM Transient 30 V G D ID25 TC = 25 C74 A (TAB

MOSTRAR MÁS

Otros transistores... IXTT60N20L2, IXTT64N25P, IXTT68P20T, IXTT69N30P, IXTT6N120, IXTT72N10, IXTT72N20, IXTT74N20P, IRF530, IXTT75N10L2, IXTT75N15, IXTT80N20L, IXTT82N25P, IXTT88N15, IXTT88N30P, IXTT8P50, IXTT90P10P