IXTT80N20L Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXTT80N20L 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 520 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 250 nS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm
Encapsulados: TO268
📄📄 Copiar
Búsqueda de reemplazo de IXTT80N20L MOSFET
- Selecciónⓘ de transistores por parámetros
IXTT80N20L datasheet
ixth88n30p ixtk88n30p ixtt88n30p ixtq88n30p.pdf
IXTH 88N30P VDSS = 300 V PolarHTTM IXTK 88N30P ID25 = 88 A Power MOSFET IXTQ 88N30P RDS(on) 40 m IXTT 88N30P N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings D (TAB) G D VDSS TJ = 25 C to 150 C 300 V S VDGR TJ = 25 C to 150 C; RGS = 1 M 300 V VGS Continuous 20 V TO-264 (IXTK)
ixtk82n25p ixtq82n25p ixtt82n25p.pdf
IXTK 82N25P VDSS = 250 V PolarHTTM IXTQ 82N25P ID25 = 82 A Power MOSFET IXTT 82N25P RDS(on) 35 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-264 (IXTK) VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C; RGS = 1 M 250 V VGSS Continuous 20 V VGSM Transient 30 V G D ID25 TC = 25
ixth8p50 ixtt8p50.pdf
IXTH 8P50 VDSS = -500 V Standard Power IXTT 8P50 ID25 = -8 A MOSFET RDS(on) = 1.2 P-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C -500 V VDGR TJ = 25 C to 150 C; RGS = 1 M -500 V D (TAB) VGS Continuous 20 V VGSM Transient 30 V TO-268 (IXTT) ID25 TC = 25 C-8 A IDM TC = 25
Otros transistores... IXTT69N30P, IXTT6N120, IXTT72N10, IXTT72N20, IXTT74N20P, IXTT75N10, IXTT75N10L2, IXTT75N15, AON7506, IXTT82N25P, IXTT88N15, IXTT88N30P, IXTT8P50, IXTT90P10P, IXTT96N15P, IXTT96N20P, IXTU01N100D
History: PDC3905Z | PF610BC | MSF13N50 | PSA10N65C
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: BCD70N07A | BCD90N03 | BCD80N06 | T50N06 | H50N06 | BCD12N65 | BCT12N65 | BCD4N65 | BCT4N65 | BCD7N65 | BCT7N65 | BCT20N65 | ASDM30P100KQ | ASDM30N90Q | ASDM30N75KQ | ASDM30N150Q
Popular searches
2sc1678 | irf4115 | 2sc828 replacement | 2sd669 datasheet | c102 transistor | bt152 datasheet | 2sa1302 datasheet | mpsa13 transistor equivalent
