IXTU02N50D Todos los transistores

 

IXTU02N50D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXTU02N50D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 30 Ohm
   Paquete / Cubierta: TO251
 

 Búsqueda de reemplazo de IXTU02N50D MOSFET

   - Selección ⓘ de transistores por parámetros

 

IXTU02N50D Datasheet (PDF)

 ..1. Size:94K  ixys
 ixtp02n50d ixtu02n50d ixty02n50d.pdf pdf_icon

IXTU02N50D

IXTP 02N50DVDSS = 500 VHigh Voltage MOSFETIXTU 02N50DID25 = 200 mAN-Channel, Depletion ModeIXTY 02N50DRDS(on) = 30 Preliminary Data SheetSymbol Test Conditions Maximum RatingsTO-220 (IXTP)VDSX TJ = 25C to 150C 500 VVDGX TJ = 25C to 150C 500 VVGS Continuous 20 VD (TAB)VGSM Transient 30 VGDSIDSS TC = 25C; TJ = 25C to 150C

 9.1. Size:94K  ixys
 ixtp01n100d ixtu01n100d ixty01n100d.pdf pdf_icon

IXTU02N50D

IXTP 01N100DVDSS = 1000 VHigh Voltage MOSFETIXTU 01N100DID25 = 100 mAN-Channel, Depletion ModeIXTY 01N100DRDS(on) = 110 Preliminary Data SheetSymbol Test Conditions Maximum RatingsTO-220 (IXTP)VDSX TJ = 25C to 150C 1000 VVDGX TJ = 25C to 150C 1000 VVGS Continuous 20 VD (TAB)GVGSM Transient 30 VDSIDSS TC = 25C; TJ = 25C to

 9.2. Size:66K  ixys
 ixtu01n80 ixty01n80.pdf pdf_icon

IXTU02N50D

IXTU 01N80VDSS = 800 VHigh Voltage MOSFETIXTY 01N80ID25 = 100mAN-Channel, Enhancement ModeRDS(on) = 50 Symbol Test Conditions Maximum Ratings TO-251 AA (IXTU)01N100VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 VGVGS Continuous 20 VDD (TAB)SVGSM Transient 30 VID25 TC = 25C; TJ = 25C to 150C 100 mAID

 9.3. Size:85K  ixys
 ixtu01n100 ixty01n100.pdf pdf_icon

IXTU02N50D

IXTU 01N100VDSS = 1000 VHigh Voltage MOSFETIXTY 01N100ID25 = 100mAN-Channel, Enhancement ModeRDS(on) = 80 Symbol Test Conditions Maximum Ratings TO-251 AA (IXTU)01N100VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VGVGS Continuous 20 VDD (TAB)SVGSM Transient 30 VID25 TC = 25C; TJ = 25C to 150C 100 mAIDM

MOSTRAR MÁS

Otros transistores... IXTT82N25P , IXTT88N15 , IXTT88N30P , IXTT8P50 , IXTT90P10P , IXTT96N15P , IXTT96N20P , IXTU01N100D , 5N65 , IXTU05N100 , IXTU12N06T , IXTU1N80P , IXTU1R4N60P , IXTU2N80P , IXTU4N60P , IXTU5N50P , IXTV02N250S .

History: PHD9NQ20T | HGN119N15S | LNC06R230 | FHU2N60A

 

 
Back to Top

 


 
.