IXTV230N85TS Todos los transistores

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IXTV230N85TS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTV230N85TS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 550 W

Tensión drenaje-fuente (Vds): 85 V

Corriente continua de drenaje (Id): 230 A

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 90 nS

Resistencia drenaje-fuente RDS(on): 0.0044 Ohm

Empaquetado / Estuche: PLUS220SMD

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IXTV230N85TS Datasheet (PDF)

2.1. ixtv230n085t.pdf Size:296K _ixys

IXTV230N85TS
IXTV230N85TS

Preliminary Technical Information VDSS = 85 V IXTV230N085T TrenchMVTM ID25 = 230 A IXTV230N085TS Power MOSFET ? ? RDS(on) ? 4.4 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings PLUS220 (IXTV) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 85 V VGSM Transient 20 V G D D (TAB) S ID25 TC = 25 C 230 A ILRMS

5.1. ixtq26n50p ixtt26n50p ixtv26n50p.pdf Size:338K _ixys

IXTV230N85TS
IXTV230N85TS

IXTQ 26N50P VDSS = 500 V PolarHVTM IXTT 26N50P ID25 = 26 A Power MOSFET ? ? IXTV 26N50P RDS(on) ? 230 m? ? ? ? ? ? ? IXTV 26N50PS N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 500 V D S D (TAB) VDGR TJ = 25 C to 150 C; RGS = 1 M? 500 V TO-268 (IXTT) VGSS Continuos 30 V VGSM Transient 40 V ID25 TC

5.2. ixtv280n055t.pdf Size:295K _ixys

IXTV230N85TS
IXTV230N85TS

Preliminary Technical Information IXTV 280N055T VDSS = 55 V TrenchMVTM IXTV 280N055TS ID25 = 280 A Power MOSFET ? ? RDS(on) ? 3.2 m ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings PLUS220 (IXTV) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 55 V VGSM Transient 20 V G D D (TAB) S ID25 TC = 25 C 280 A ILRM

5.3. ixtq22n60p ixtv22n60p.pdf Size:314K _ixys

IXTV230N85TS
IXTV230N85TS

IXTQ 22N60P VDSS = 600 V PolarHVTM IXTV 22N60P ID25 = 22 A Power MOSFET ? ? IXTV 22N60PS RDS (on) ? 350 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 600 V VGS Continuous 30 V G D (TAB) S VGSM Tranisent 40 V ID25 TC = 25 C22 A IDM TC = 25 C,

5.4. ixth22n50p ixtq22n50p ixtv22n50p.pdf Size:198K _ixys

IXTV230N85TS
IXTV230N85TS

IXTH 22N50P VDSS = 500 V PolarHVTM IXTQ 22N50P ID25 = 22 A Power MOSFET IXTV 22N50P RDS(on) ? ? ? ? ? 270 m? ? ? ? ? N-Channel Enhancement Mode IXTV 22N50PS Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings G (TAB) D VDSS TJ = 25C to 150C 500 V S VDGR TJ = 25C to 150C; RGS = 1 M? 500 V VGS Continuous 30 V TO-3P (IXTQ) VGSM Transient 40 V ID25 TC = 25

5.5. ixtv250n075t.pdf Size:294K _ixys

IXTV230N85TS
IXTV230N85TS

Preliminary Technical Information IXTV250N075T VDSS = 75 V TrenchMVTM IXTV250N075TS ID25 = 250 A Power MOSFET ? ? RDS(on) ? 4.0 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings PLUS220 (IXTV) VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 75 V VGSM Transient 20 V G D D (TAB) S ID25 TC = 25 C 250 A ILRMS L

5.6. ixtt26n60p ixtv26n60p ixtv26n60ps ixth26n60p ixtq26n60p.pdf Size:230K _ixys

IXTV230N85TS
IXTV230N85TS

IXTH26N60P VDSS = 600 V PolarHVTM IXTQ26N60P ID25 = 26 A Power MOSFET ? ? IXTT26N60P RDS(on) ? 270 m? ? ? ? ? ? ? N-Channel Enhancement Mode IXTV26N60P Avalanche Rated TO-247 (IXTH) IXTV26N60PS G D S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V TO-3P (IXTQ) VDGR TJ = 25C to 150C; RGS = 1 M? 600 V VGSS Continuous 30 V VGSM Transient 40 V G D ID25

Otros transistores... IXTV18N60PS , IXTV200N10T , IXTV200N10TS , IXTV22N50P , IXTV22N50PS , IXTV22N60P , IXTV22N60PS , IXTV230N085T , 2SK163 , IXTV250N075T , IXTV250N075TS , IXTV26N50P , IXTV26N50PS , IXTV26N60P , IXTV26N60PS , IXTV270N055T2 , IXTV270N055T2S .

 


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Introduzca al menos 1 números o letras