IXTV250N075TS Todos los transistores

 

IXTV250N075TS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXTV250N075TS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 550 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 250 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 80 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
   Paquete / Cubierta: PLUS220SMD
 

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IXTV250N075TS Datasheet (PDF)

 2.1. Size:294K  ixys
ixtv250n075t.pdf pdf_icon

IXTV250N075TS

Preliminary Technical InformationIXTV250N075T VDSS = 75 VTrenchMVTMIXTV250N075TS ID25 = 250 APower MOSFET RDS(on) 4.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsPLUS220 (IXTV)VDSS TJ = 25 C to 175 C75 VVDGR TJ = 25 C to 175 C; RGS = 1 M 75 VVGSM Transient 20 VGDD (TAB)S

 9.1. Size:230K  ixys
ixtt26n60p ixtv26n60p ixtv26n60ps ixth26n60p ixtq26n60p.pdf pdf_icon

IXTV250N075TS

IXTH26N60P VDSS = 600 VPolarHVTMIXTQ26N60P ID25 = 26 APower MOSFET IXTT26N60P RDS(on) 270 m N-Channel Enhancement ModeIXTV26N60PAvalanche RatedTO-247 (IXTH)IXTV26N60PSGDSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 600 V TO-3P (IXTQ)VDGR TJ = 25C to 150C; RGS = 1 M 600 VVGSS Continuous 30 VVGSM Tran

 9.2. Size:294K  ixys
ixtv230n085ts.pdf pdf_icon

IXTV250N075TS

Preliminary Technical InformationVDSS = 85 VIXTV230N085TTrenchMVTMID25 = 230 AIXTV230N085TSPower MOSFET RDS(on) 4.4 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsPLUS220 (IXTV)VDSS TJ = 25 C to 175 C85 VVDGR TJ = 25 C to 175 C; RGS = 1 M 85 VVGSM Transient 20 VGDD (TAB)S

 9.3. Size:295K  ixys
ixtv280n055t.pdf pdf_icon

IXTV250N075TS

Preliminary Technical InformationIXTV 280N055T VDSS = 55 VTrenchMVTMIXTV 280N055TS ID25 = 280 APower MOSFET RDS(on) 3.2 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsPLUS220 (IXTV)VDSS TJ = 25 C to 175 C55 VVDGR TJ = 25 C to 175 C; RGS = 1 M 55 VVGSM Transient 20 VGDD (TAB)

Otros transistores... IXTV200N10TS , IXTV22N50P , IXTV22N50PS , IXTV22N60P , IXTV22N60PS , IXTV230N085T , IXTV230N85TS , IXTV250N075T , IRF1405 , IXTV26N50P , IXTV26N50PS , IXTV26N60P , IXTV26N60PS , IXTV270N055T2 , IXTV270N055T2S , IXTV280N055T , IXTV280N055TS .

History: FDR4420A | FCH110N65F

 

 
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