IXTY1N100P MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IXTY1N100P datasheet

7.1. Size:123K ixys
ixty1n120p.pdf pdf_icon

PolarTM VDSS = 1200V IXTY1N120P Power MOSFETs ID25 = 1A IXTA1N120P RDS(on) 20 IXTP1N120P TO-252 (IXTY) N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Rectifier S D (Tab) TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 1200 V G VDGR TJ = 25 C to 150 C, RGS = 1M 1200 V S VGSS Continuous 2

8.1. Size:60K ixys
ixta1n80 ixtp1n80 ixty1n80.pdf pdf_icon

IXTA 1N80 VDSS = 800 V High Voltage MOSFET IXTP 1N80 ID25 = 750 mA IXTY 1N80 N-Channel Enhancement Mode RDS(on) = 11 Avalanche Energy Rated Preliminary Data Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V D (TAB) VGS Continuous 20 V G D S VGSM Transient 30 V ID25 T

8.2. Size:161K ixys
ixta1n80p ixtp1n80p ixtu1n80p ixty1n80p.pdf pdf_icon

Preliminary Technical Information VDSS = 800V IXTA1N80P PolarTM Power ID25 = 1A IXTP1N80P MOSFET RDS(on) 14 IXTU1N80P IXTY1N80P N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) TO-220 (IXTP) TO-251 (IXTU) G G (TAB) (TAB) (TAB) S G D D S S Symbol Test Conditions Maximum Ratings TO-252 (IXTY) VDSS TJ = 25 C to 150 C 800 V VD

Otros transistores... IXTY05N100 , IXTY08N100D2 , IXTY08N100P , IXTY08N50D2 , IXTY10P15T , IXTY12N06T , IXTY15P15T , IXTY18P10T , 2N7002 , IXTY1N80 , IXTY1N80P , IXTY1R4N100P , IXTY1R4N60P , IXTY1R6N100D2 , IXTY1R6N50D2 , IXTY1R6N50P , IXTY26P10T .