IXTY1R4N60P MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IXTY1R4N60P datasheet

6.1. Size:123K ixys
ixty1r4n120p.pdf pdf_icon

PolarTM VDSS = 1200V IXTY1R4N120P Power MOSFETs ID25 = 1.4A IXTA1R4N120P RDS(on) 13 IXTP1R4N120P TO-252 (IXTY) N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Rectifier S D (Tab) TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 1200 V G VDGR TJ = 25 C to 150 C, RGS = 1M 1200 V S VGSS Contin

8.1. Size:91K ixys
ixtp1r6n50p ixty1r6n50p.pdf pdf_icon

IXTP 1R6N50P VDSS = 500 V PolarHVTM IXTY 1R6N50P ID25 = 1.6 A Power MOSFET RDS(on) 6.5 N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGS Continuous 30 V G (TAB) D VGSM Transient 40 V S ID25 TC = 25 C 1.6 A IDM

8.2. Size:179K ixys
ixty1r6n50d2 ixta1r6n50d2 ixtp1r6n50d2.pdf pdf_icon

Preliminary Technical Information Depletion Mode VDSX = 500V IXTY1R6N50D2 MOSFET ID(on) > 1.6A IXTA1R6N50D2 RDS(on) 2.3 IXTP1R6N50D2 N-Channel TO-252 (IXTY) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-263 AA (IXTA) VDSX TJ = 25 C to 150 C 500 V VGSX Continuous 20 V VGSM Transient 30 V G S PD TC = 25 C 100 W D (Tab) TJ -

Otros transistores... IXTY10P15T , IXTY12N06T , IXTY15P15T , IXTY18P10T , IXTY1N100P , IXTY1N80 , IXTY1N80P , IXTY1R4N100P , AO3401 , IXTY1R6N100D2 , IXTY1R6N50D2 , IXTY1R6N50P , IXTY26P10T , IXTY2N100P , IXTY2N60P , IXTY2N80P , IXTY2R4N50P .