IXTY44N10T Todos los transistores

 

IXTY44N10T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXTY44N10T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 130 W
   Voltaje máximo drenador - fuente |Vds|: 100 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 44 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
   Carga de la puerta (Qg): 33 nC
   Tiempo de subida (tr): 60 nS
   Resistencia entre drenaje y fuente RDS(on): 0.03 Ohm
   Paquete / Cubierta: TO252

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IXTY44N10T Datasheet (PDF)

 ..1. Size:187K  ixys
ixtp44n10t ixty44n10t.pdf

IXTY44N10T
IXTY44N10T

Preliminary Technical InformationIXTP44N10T VDSS = 100 VTrenchMVTMIXTY44N10T ID25 = 44 APower MOSFET RDS(on) 30 m N-Channel Enhancement ModeAvalanche Rated TO-220 (IXTP)D (TAB)GDSTO-252 AA (IXTY)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 175 C 100 VVDGR TJ = 25 C to 175 C; RGS = 1 M 100 VGVGSM Tr

 ..2. Size:207K  inchange semiconductor
ixty44n10t.pdf

IXTY44N10T
IXTY44N10T

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IXTY44N10TFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

 9.1. Size:238K  ixys
ixta4n65x2 ixtp4n65x2 ixty4n65x2.pdf

IXTY44N10T
IXTY44N10T

Preliminary Technical InformationX2-Class VDSS = 650VIXTY4N65X2Power MOSFET ID25 = 4AIXTA4N65X2 RDS(on) 850m IXTP4N65X2N-Channel Enhancement ModeTO-252 (IXTY)G SSymbol Test Conditions Maximum Ratings D (Tab)VDSS TJ = 25C to 150C 650 VTO-263 (IXTA)VDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30 VG

 9.2. Size:313K  ixys
ixty4n65x2 ixta4n65x2 ixtp4n65x2.pdf

IXTY44N10T
IXTY44N10T

X2-Class VDSS = 650VIXTY4N65X2Power MOSFET ID25 = 4AIXTA4N65X2 RDS(on) 850m IXTP4N65X2N-Channel Enhancement ModeTO-252 (IXTY)G SSymbol Test Conditions Maximum Ratings D (Tab)VDSS TJ = 25C to 150C 650 VTO-263 (IXTA)VDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30 VGVGSM Transient 40 VSID25 TC

 9.3. Size:284K  ixys
ixty48p05t ixta48p05t ixtp48p05t.pdf

IXTY44N10T
IXTY44N10T

TrenchPTM VDSS = - 50VIXTY48P05TID25 = - 48APower MOSFETIXTA48P05T RDS(on) 30m IXTP48P05TP-Channel Enhancement ModeAvalanche RatedTO-252 (IXTY)G SD (Tab)TO-263 (IXTA)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C - 50 VSVDGR TJ = 25C to 150C, RGS = 1M - 50 VD (Tab)VGSS Continuous 15

 9.4. Size:141K  ixys
ixta4n60p ixtp4n60p ixtu4n60p ixty4n60p.pdf

IXTY44N10T
IXTY44N10T

IXTA4N60P VDSS = 600 VPolarHVTMIXTP4N60P ID25 = 4 APower MOSFETIXTU4N60P RDS(on) 2.0 N-Channel Enhancement ModeIXTY4N60PAvalanche RatedTO-263 (IXTA)GSSymbol Test Conditions Maximum Ratings(TAB)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VTO-220 (IXTP)VGSS Continuous 30 VVGSM Transient 40 V

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