BF1201WR Todos los transistores

 ..1. Size:121K  philips
 bf1201 bf1201r bf1201wr 2.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BF1201; BF1201R; BF1201WR N-channel dual-gate PoLo MOS-FETs Product specification 2000 Mar 29 Supersedes data of 1999 Dec 01 Philips Semiconductors Product specification BF1201; BF1201R; N-channel dual-gate PoLo MOS-FETs BF1201WR FEATURES PINNING Short channel transistor with high PIN DESCRIPTION handbook, 2 columns 4 3 forward transfer ad

 8.1. Size:405K  philips
 bf1201 r wr.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BF1201; BF1201R; BF1201WR N-channel dual-gate PoLo MOS-FETs Product specification 2000 Mar 29 Supersedes data of 1999 Dec 01 NXP Semiconductors Product specification BF1201; BF1201R; N-channel dual-gate PoLo MOS-FETs BF1201WR FEATURES PINNING Short channel transistor with high PIN DESCRIPTION handbook, 2 columns 4 3 forward transfer ad

 9.1. Size:434K  1
 bf120.pdf

 9.2. Size:253K  philips
 bf1208d.pdf

BF1208D Dual N-channel dual gate MOSFET Rev. 01 16 May 2007 Product data sheet 1. Product profile 1.1 General description The BF1208D is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1 bias of amplifier B. The source and substrate are interconnected. Internal bias circuits en

 9.3. Size:626K  philips
 bf1205.pdf

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BF1205 Dual N-channel dual gate MOS-FET Product specification 2003 Sep 30 NXP Semiconductors Product specification Dual N-channel dual gate MOS-FET BF1205 FEATURES PINNING - SOT363 Two low noise gain controlled amplifiers in a single PIN DESCRIPTION package. One with a fully integrated bias and one with a 1gate

 9.4. Size:177K  philips
 bf1202 r wr.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BF1202; BF1202R; BF1202WR N-channel dual-gate PoLo MOS-FETs Product specification 2010 Sep 16 Supersedes data of 2000 Mar 29 NXP Semiconductors Product specification N-channel dual-gate PoLo MOS-FETs BF1202; BF1202R; BF1202WR FEATURES PINNING Short channel transistor with high PIN DESCRIPTION handbook, 2 columns 4 3 forward transfer admi

 9.5. Size:160K  philips
 bf1207.pdf

BF1207 Dual N-channel dual gate MOSFET Rev. 01 28 July 2005 Product data sheet 1. Product profile 1.1 General description The BF1207 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The source and substrate are interconnected. Internal bias circuits enable Direct Current (DC) stabilization and a very good cross-modulati

 9.6. Size:159K  philips
 bf1204.pdf

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BF1204 Dual N-channel dual gate MOS-FET Product specification 2010 Sep 16 Supersedes data of 2001 Apr 25 NXP Semiconductors Product specification Dual N-channel dual gate MOS-FET BF1204 FEATURES PINNING - SOT363 Two low noise gain controlled amplifiers in a single PIN DESCRIPTION package 1gate 1 (a) Superi

 9.7. Size:171K  philips
 bf1205c.pdf

BF1205C Dual N-channel dual gate MOS-FET Rev. 02 15 August 2006 Product data sheet 1. Product profile 1.1 General description The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1 bias of amplifier b. The source and substrate are interconnected. Internal bias circ

 9.8. Size:560K  philips
 bf1203.pdf

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BF1203 Dual N-channel dual gate MOS-FET Product specification 2001 Apr 25 Supersedes data of 2000 Dec 04 NXP Semiconductors Product specification Dual N-channel dual gate MOS-FET BF1203 FEATURES PINNING - SOT363 Two low noise gain controlled amplifiers in a single PIN DESCRIPTION package 1 gate 1 (a) Super

 9.9. Size:205K  philips
 bf1206f.pdf

BF1206F Dual N-channel dual gate MOSFET Rev. 01 30 January 2006 Product data sheet 1. Product profile 1.1 General description The BF1206F is a combination of two different dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable Direct Current (DC) stabilization and a very good cross-modulation perform

 9.10. Size:628K  philips
 bf1206.pdf

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BF1206 Dual N-channel dual-gate MOS-FET Product specification 2003 Nov 17 NXP Semiconductors Product specification Dual N-channel dual-gate MOS-FET BF1206 FEATURES PINNING - SOT363 Two low noise gain controlled amplifiers in a single PIN DESCRIPTION package 1 drain (b) Superior cross-modulation performance

 9.11. Size:123K  philips
 bf1202 bf1202r bf1202wr 2.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BF1202; BF1202R; BF1202WR N-channel dual-gate PoLo MOS-FETs Product specification 2000 Mar 29 Supersedes data of 1999 Dec 01 Philips Semiconductors Product specification BF1202; BF1202R; N-channel dual-gate PoLo MOS-FETs BF1202WR FEATURES PINNING Short channel transistor with high PIN DESCRIPTION handbook, 2 columns 4 3 forward transfer ad

 9.12. Size:462K  cn leading energy
 legm75bf120l5h.pdf

Mar.2020 LEGM75BF120L5H IGBT Power Module Features Applications VCE=1200V IC=75A The inverter Low VCE(sat) Motor control and drives VCEsat with positive temperature coefficient Maximum junction temperature 150 Isolation Type Package Package Type & Internal Circuit L5 Internal Circuit Maximum Rated Values IGBT Inverter Symbol Parame