BF1205 Todos los transistores

 

BF1205 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BF1205
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 0.03 A

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 30 Ohm
   Paquete / Cubierta: SOT363

 Búsqueda de reemplazo de MOSFET BF1205

 

BF1205 Datasheet (PDF)

 ..1. Size:626K  philips
bf1205.pdf

BF1205 BF1205

DISCRETE SEMICONDUCTORS DATA SHEEThandbook, halfpageMBD128BF1205Dual N-channel dual gate MOS-FETProduct specification 2003 Sep 30NXP Semiconductors Product specificationDual N-channel dual gate MOS-FET BF1205FEATURES PINNING - SOT363 Two low noise gain controlled amplifiers in a single PIN DESCRIPTIONpackage. One with a fully integrated bias and one with a 1gate

 0.1. Size:171K  philips
bf1205c.pdf

BF1205 BF1205

BF1205CDual N-channel dual gate MOS-FETRev. 02 15 August 2006 Product data sheet1. Product profile1.1 General descriptionThe BF1205C is a combination of two dual gate MOS-FET amplifiers with shared sourceand gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1bias of amplifier b.The source and substrate are interconnected. Internal bias circ

 9.1. Size:405K  philips
bf1201 r wr.pdf

BF1205 BF1205

DISCRETE SEMICONDUCTORS DATA SHEETBF1201; BF1201R; BF1201WRN-channel dual-gate PoLo MOS-FETsProduct specification 2000 Mar 29Supersedes data of 1999 Dec 01NXP Semiconductors Product specificationBF1201; BF1201R;N-channel dual-gate PoLo MOS-FETsBF1201WRFEATURES PINNING Short channel transistor with high PIN DESCRIPTIONhandbook, 2 columns 43forward transfer ad

 9.2. Size:253K  philips
bf1208d.pdf

BF1205 BF1205

BF1208DDual N-channel dual gate MOSFETRev. 01 16 May 2007 Product data sheet1. Product profile1.1 General descriptionThe BF1208D is a combination of two dual gate MOSFET amplifiers with shared sourceand gate2 leads and an integrated switch. The integrated switch is operated by the gate1bias of amplifier B.The source and substrate are interconnected. Internal bias circuits en

 9.3. Size:177K  philips
bf1202 r wr.pdf

BF1205 BF1205

DISCRETE SEMICONDUCTORS DATA SHEETBF1202; BF1202R; BF1202WRN-channel dual-gate PoLo MOS-FETsProduct specification 2010 Sep 16Supersedes data of 2000 Mar 29NXP Semiconductors Product specificationN-channel dual-gate PoLo MOS-FETs BF1202; BF1202R; BF1202WRFEATURES PINNING Short channel transistor with high PIN DESCRIPTIONhandbook, 2 columns 43forward transfer admi

 9.4. Size:160K  philips
bf1207.pdf

BF1205 BF1205

BF1207Dual N-channel dual gate MOSFETRev. 01 28 July 2005 Product data sheet1. Product profile1.1 General descriptionThe BF1207 is a combination of two dual gate MOSFET amplifiers with shared sourceand gate2 leads and an integrated switch.The source and substrate are interconnected. Internal bias circuits enable Direct Current(DC) stabilization and a very good cross-modulati

 9.5. Size:121K  philips
bf1201 bf1201r bf1201wr 2.pdf

BF1205 BF1205

DISCRETE SEMICONDUCTORSDATA SHEETBF1201; BF1201R; BF1201WRN-channel dual-gate PoLoMOS-FETsProduct specification 2000 Mar 29Supersedes data of 1999 Dec 01Philips Semiconductors Product specificationBF1201; BF1201R;N-channel dual-gate PoLo MOS-FETsBF1201WRFEATURES PINNING Short channel transistor with highPIN DESCRIPTIONhandbook, 2 columns 43forward transfer ad

 9.6. Size:159K  philips
bf1204.pdf

BF1205 BF1205

DISCRETE SEMICONDUCTORS DATA SHEEThandbook, halfpageMBD128BF1204Dual N-channel dual gate MOS-FETProduct specification 2010 Sep 16Supersedes data of 2001 Apr 25NXP Semiconductors Product specificationDual N-channel dual gate MOS-FET BF1204FEATURES PINNING - SOT363 Two low noise gain controlled amplifiers in a single PIN DESCRIPTIONpackage1gate 1 (a) Superi

 9.7. Size:560K  philips
bf1203.pdf

BF1205 BF1205

DISCRETE SEMICONDUCTORS DATA SHEEThandbook, halfpageMBD128BF1203Dual N-channel dual gate MOS-FETProduct specification 2001 Apr 25Supersedes data of 2000 Dec 04NXP Semiconductors Product specificationDual N-channel dual gate MOS-FET BF1203FEATURES PINNING - SOT363 Two low noise gain controlled amplifiers in a single PIN DESCRIPTIONpackage1 gate 1 (a) Super

 9.8. Size:205K  philips
bf1206f.pdf

BF1205 BF1205

BF1206FDual N-channel dual gate MOSFETRev. 01 30 January 2006 Product data sheet1. Product profile1.1 General descriptionThe BF1206F is a combination of two different dual gate MOSFET amplifiers with sharedsource and gate2 leads.The source and substrate are interconnected. Internal bias circuits enable Direct Current(DC) stabilization and a very good cross-modulation perform

 9.9. Size:628K  philips
bf1206.pdf

BF1205 BF1205

DISCRETE SEMICONDUCTORS DATA SHEEThandbook, halfpageMBD128BF1206Dual N-channel dual-gate MOS-FETProduct specification 2003 Nov 17NXP Semiconductors Product specificationDual N-channel dual-gate MOS-FET BF1206FEATURES PINNING - SOT363 Two low noise gain controlled amplifiers in a single PIN DESCRIPTIONpackage1 drain (b) Superior cross-modulation performance

 9.10. Size:123K  philips
bf1202 bf1202r bf1202wr 2.pdf

BF1205 BF1205

DISCRETE SEMICONDUCTORSDATA SHEETBF1202; BF1202R; BF1202WRN-channel dual-gate PoLoMOS-FETsProduct specification 2000 Mar 29Supersedes data of 1999 Dec 01Philips Semiconductors Product specificationBF1202; BF1202R;N-channel dual-gate PoLo MOS-FETsBF1202WRFEATURES PINNING Short channel transistor with highPIN DESCRIPTIONhandbook, 2 columns 43forward transfer ad

 9.11. Size:462K  cn leading energy
legm75bf120l5h.pdf

BF1205 BF1205

Mar.2020 LEGM75BF120L5H IGBT Power Module Features: Applications: VCE=1200V IC=75A The inverter Low VCE(sat) Motor control and drives VCEsat with positive temperature coefficient Maximum junction temperature 150 Isolation Type Package Package Type & Internal Circuit L5 Internal Circuit Maximum Rated ValuesIGBT Inverter Symbol Parame

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
Back to Top

 


BF1205
  BF1205
  BF1205
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
Back to Top