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BF1211 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BF1211
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 6 V
   |Id|ⓘ - Corriente continua de drenaje: 0.03 A

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 30 Ohm
   Paquete / Cubierta: SOT143B
     - Selección de transistores por parámetros

 

BF1211 Datasheet (PDF)

 ..1. Size:415K  philips
 bf1211 r wr.pdf pdf_icon

BF1211

DISCRETE SEMICONDUCTORS DATA SHEETBF1211; BF1211R; BF1211WRN-channel dual-gate MOS-FETsProduct specification 2003 Dec 16NXP Semiconductors Product specificationBF1211; BF1211R;N-channel dual-gate MOS-FETsBF1211WRFEATURES PINNING Short channel transistor with high forward transfer PIN DESCRIPTIONadmittance to input capacitance ratio1source Low noise gain contr

 9.1. Size:252K  philips
 bf1210.pdf pdf_icon

BF1211

BF1210Dual N-channel dual gate MOSFETRev. 01 25 October 2006 Product data sheet1. Product profile1.1 General descriptionThe BF1210 is a combination of two dual gate MOSFET amplifiers with shared sourceand gate2 leads.The source and substrate are interconnected. Internal bias circuits enableDC stabilization and a very good cross modulation performance during AGC. Integrated

 9.2. Size:262K  philips
 bf1215.pdf pdf_icon

BF1211

BF1215Dual N-channel dual gate MOSFETRev. 01 6 May 2010 Product data sheet1. Product profile1.1 General descriptionThe BF1215 is a combination of two dual gate MOSFET amplifiers with shared source lead, shared gate2 lead and an integrated switch.The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross modulation perfor

 9.3. Size:672K  philips
 bf1218.pdf pdf_icon

BF1211

BF1218Dual N-channel dual gate MOSFETRev. 01 14 April 2010 Product data sheet1. Product profile1.1 General descriptionThe BF1218 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1 bias of amplifier B.The source and substrate are interconnected. Internal bias circuits

MOSTRAR MÁS

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: MRF5003 | 4N65KG-T60-K | STP5N62K3 | IRFR120TR | RQK0608BQDQS | AONS36316

 

 
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