BF1211 Todos los transistores

 ..1. Size:415K  philips
 bf1211 r wr.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BF1211; BF1211R; BF1211WR N-channel dual-gate MOS-FETs Product specification 2003 Dec 16 NXP Semiconductors Product specification BF1211; BF1211R; N-channel dual-gate MOS-FETs BF1211WR FEATURES PINNING Short channel transistor with high forward transfer PIN DESCRIPTION admittance to input capacitance ratio 1source Low noise gain contr

 9.1. Size:252K  philips
 bf1210.pdf

BF1210 Dual N-channel dual gate MOSFET Rev. 01 25 October 2006 Product data sheet 1. Product profile 1.1 General description The BF1210 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross modulation performance during AGC. Integrated

 9.2. Size:262K  philips
 bf1215.pdf

BF1215 Dual N-channel dual gate MOSFET Rev. 01 6 May 2010 Product data sheet 1. Product profile 1.1 General description The BF1215 is a combination of two dual gate MOSFET amplifiers with shared source lead, shared gate2 lead and an integrated switch. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross modulation perfor

 9.3. Size:672K  philips
 bf1218.pdf

BF1218 Dual N-channel dual gate MOSFET Rev. 01 14 April 2010 Product data sheet 1. Product profile 1.1 General description The BF1218 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1 bias of amplifier B. The source and substrate are interconnected. Internal bias circuits

 9.4. Size:211K  philips
 bf1214.pdf

BF1214 Dual N-channel dual gate MOSFET Rev. 01 30 October 2007 Product data sheet 1. Product profile 1.1 General description The BF1214 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross modulation performance during AGC. Integrated

 9.5. Size:185K  philips
 bf1216.pdf

BF1216 Dual N-channel dual gate MOSFET Rev. 01 29 April 2010 Product data sheet 1. Product profile 1.1 General description The BF1216 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and very good cross modulation performance during AGC. Integrated dio

 9.6. Size:429K  philips
 bf1212 r wr.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BF1212; BF1212R; BF1212WR N-channel dual-gate MOS-FETs Product specification 2003 Nov 14 NXP Semiconductors Product specification BF1212; BF1212R; N-channel dual-gate MOS-FETs BF1212WR FEATURES PINNING Short channel transistor with high forward transfer PIN DESCRIPTION admittance to input capacitance ratio 1source Low noise gain contr

 9.7. Size:262K  nxp
 bf1215.pdf

BF1215 Dual N-channel dual gate MOSFET Rev. 01 6 May 2010 Product data sheet 1. Product profile 1.1 General description The BF1215 is a combination of two dual gate MOSFET amplifiers with shared source lead, shared gate2 lead and an integrated switch. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross modulation perfor