BF1212WR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BF1212WR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 6 V
   |Id|ⓘ - Corriente continua de drenaje: 0.03 A

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 30 Ohm
Paquete / Cubierta: SOT343R

Búsqueda de reemplazo de MOSFET BF1212WR

BF1212WR Datasheet (PDF)

8.1. Size:429K philips
bf1212 r wr.pdf

DISCRETE SEMICONDUCTORS DATA SHEETBF1212; BF1212R; BF1212WRN-channel dual-gate MOS-FETsProduct specification 2003 Nov 14NXP Semiconductors Product specificationBF1212; BF1212R;N-channel dual-gate MOS-FETsBF1212WRFEATURES PINNING Short channel transistor with high forward transfer PIN DESCRIPTIONadmittance to input capacitance ratio1source Low noise gain contr

9.1. Size:415K philips
bf1211 r wr.pdf

DISCRETE SEMICONDUCTORS DATA SHEETBF1211; BF1211R; BF1211WRN-channel dual-gate MOS-FETsProduct specification 2003 Dec 16NXP Semiconductors Product specificationBF1211; BF1211R;N-channel dual-gate MOS-FETsBF1211WRFEATURES PINNING Short channel transistor with high forward transfer PIN DESCRIPTIONadmittance to input capacitance ratio1source Low noise gain contr

9.2. Size:252K philips
bf1210.pdf

BF1210Dual N-channel dual gate MOSFETRev. 01 25 October 2006 Product data sheet1. Product profile1.1 General descriptionThe BF1210 is a combination of two dual gate MOSFET amplifiers with shared sourceand gate2 leads.The source and substrate are interconnected. Internal bias circuits enableDC stabilization and a very good cross modulation performance during AGC. Integrated

9.3. Size:262K philips
bf1215.pdf

BF1215Dual N-channel dual gate MOSFETRev. 01 6 May 2010 Product data sheet1. Product profile1.1 General descriptionThe BF1215 is a combination of two dual gate MOSFET amplifiers with shared source lead, shared gate2 lead and an integrated switch.The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross modulation perfor

9.4. Size:672K philips
bf1218.pdf

BF1218Dual N-channel dual gate MOSFETRev. 01 14 April 2010 Product data sheet1. Product profile1.1 General descriptionThe BF1218 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1 bias of amplifier B.The source and substrate are interconnected. Internal bias circuits

9.5. Size:211K philips
bf1214.pdf

BF1214Dual N-channel dual gate MOSFETRev. 01 30 October 2007 Product data sheet1. Product profile1.1 General descriptionThe BF1214 is a combination of two dual gate MOSFET amplifiers with shared sourceand gate2 leads.The source and substrate are interconnected. Internal bias circuits enableDC stabilization and a very good cross modulation performance during AGC. Integrated

9.6. Size:185K philips
bf1216.pdf

BF1216Dual N-channel dual gate MOSFETRev. 01 29 April 2010 Product data sheet1. Product profile1.1 General descriptionThe BF1216 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads.The source and substrate are interconnected. Internal bias circuits enable DC stabilization and very good cross modulation performance during AGC. Integrated dio

9.7. Size:262K nxp
bf1215.pdf

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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