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BF1214 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BF1214
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 6 V
   |Id|ⓘ - Corriente continua de drenaje: 0.03 A

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 30 Ohm
   Paquete / Cubierta: SOT363
 

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BF1214 Datasheet (PDF)

 ..1. Size:211K  philips
 bf1214.pdf pdf_icon

BF1214

BF1214Dual N-channel dual gate MOSFETRev. 01 30 October 2007 Product data sheet1. Product profile1.1 General descriptionThe BF1214 is a combination of two dual gate MOSFET amplifiers with shared sourceand gate2 leads.The source and substrate are interconnected. Internal bias circuits enableDC stabilization and a very good cross modulation performance during AGC. Integrated

 9.1. Size:415K  philips
 bf1211 r wr.pdf pdf_icon

BF1214

DISCRETE SEMICONDUCTORS DATA SHEETBF1211; BF1211R; BF1211WRN-channel dual-gate MOS-FETsProduct specification 2003 Dec 16NXP Semiconductors Product specificationBF1211; BF1211R;N-channel dual-gate MOS-FETsBF1211WRFEATURES PINNING Short channel transistor with high forward transfer PIN DESCRIPTIONadmittance to input capacitance ratio1source Low noise gain contr

 9.2. Size:252K  philips
 bf1210.pdf pdf_icon

BF1214

BF1210Dual N-channel dual gate MOSFETRev. 01 25 October 2006 Product data sheet1. Product profile1.1 General descriptionThe BF1210 is a combination of two dual gate MOSFET amplifiers with shared sourceand gate2 leads.The source and substrate are interconnected. Internal bias circuits enableDC stabilization and a very good cross modulation performance during AGC. Integrated

 9.3. Size:262K  philips
 bf1215.pdf pdf_icon

BF1214

BF1215Dual N-channel dual gate MOSFETRev. 01 6 May 2010 Product data sheet1. Product profile1.1 General descriptionThe BF1215 is a combination of two dual gate MOSFET amplifiers with shared source lead, shared gate2 lead and an integrated switch.The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross modulation perfor

MOSTRAR MÁS

Otros transistores... BF1208D , BF1210 , BF1211 , BF1211R , BF1211WR , BF1212 , BF1212R , BF1212WR , K3569 , BF1218 , BF904AR , BF904AWR , BLA0912-250 , BLA0912-250R , BLA1011-10 , BLA1011-2 , BLA1011-200 .

History: HRD72N06K | FDM100-0045SP | TD422BL | LSGE10R080W3 | SPP80N05L | HUF75831SK8T | FMV10N80E

 

 
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