BF904AWR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BF904AWR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 7 V
   |Id|ⓘ - Corriente continua de drenaje: 0.03 A

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 30 Ohm
Paquete / Cubierta: SOT343R

Búsqueda de reemplazo de MOSFET BF904AWR

BF904AWR Datasheet (PDF)

8.1. Size:302K philips
bf904a ar awr.pdf

BF904A; BF904AR; BF904AWRN-channel dual gate MOS-FETsRev. 04 13 November 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links

9.1. Size:85K philips
bf904wr 1.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBF904WRN-channel dual-gate MOS-FET1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationN-channel dual-gate MOS-FET BF904WRFEATURES PINNING Specially designed for use at 5 V supply voltagePIN SYMBOL DESCRIPTION Short channel transistor with high f

9.2. Size:303K philips
bf904 bf904r n.pdf

BF904; BF904RN-channel dual gate MOS-FETsRev. 06 13 November 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links asshown be

9.3. Size:133K philips
bf904 bf904r 1.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBF904; BF904RN-channel dual gate MOS-FETs1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationN-channel dual gate MOS-FETs BF904; BF904Rtransistor consists of an amplifier MOS-FET with sourceFEATURESand substrate interconnected and an internal bias circu

9.4. Size:119K philips
bf904wr 0.pdf

9.5. Size:118K philips
bf904 bf904r 5.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBF904; BF904RN-channel dual gate MOS-FETs1999 May 17Product specificationSupersedes data of 1997 Sep 05Philips Semiconductors Product specificationN-channel dual gate MOS-FETs BF904; BF904Rand substrate interconnected and an internal bias circuit toFEATURESensure good cross-modulation performance during AGC. Specially designed for use

9.6. Size:156K philips
bf904wr.pdf

DISCRETE SEMICONDUCTORS DATA SHEETBF904WRN-channel dual-gate MOS-FETProduct specification 2010 Sep 15Supersedes data of 1995 Apr 25NXP Semiconductors Product specificationN-channel dual-gate MOS-FET BF904WRFEATURES PINNING Specially designed for use at 5 V supply voltagePIN SYMBOL DESCRIPTION Short channel transistor with high forward transfer 1s, b sourceadmit

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