BLA1011-10 Todos los transistores

 ..1. Size:72K  philips
 bla1011-10.pdf

DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLA1011-10 Avionics LDMOS transistor Product specification 2003 Nov 19 Supersedes data of 2002 Oct 02 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-10 FEATURES PINNING - SOT467C High power gain PIN DESCRIPTION Easy power control 1 drain Excellent ruggedness 2 gate Source on mounting base

 6.1. Size:83K  philips
 bla1011-200 n 1.pdf

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Preliminary specification 2000 Aug 02 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA1011-200 FEATURES PINNING - SOT502A High power gain PIN DESCRIPTION Easy power control 1drain Excellent ruggedness 2gate Source on mounting base elimin

 6.2. Size:76K  philips
 bla1011-200 bla1011s-200.pdf

BLA1011-200; BLA1011S-200 Avionics LDMOS transistor Rev. 08 26 October 2005 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz. Table 1 Typical performance RF performance at Th = 25 C in a common source class-AB test circuit; IDq = 150 mA; typical values. Mode

 6.3. Size:73K  philips
 bla1011-2.pdf

DISCRETE SEMICONDUCTORS DATA SHEET M3D438 BLA1011-2 Avionics LDMOS transistor Product specification 2003 Nov 19 Supersedes data of 2002 Oct 02 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-2 FEATURES PINNING - SOT538A High power gain PIN DESCRIPTION Easy power control 1 drain Excellent ruggedness 2 gate Source on mounting base el

 6.4. Size:65K  philips
 bla1011-300.pdf

BLA1011-300 Avionics LDMOS transistors Rev. 02 5 February 2008 Product data sheet 1. Product profile 1.1 General description 300 W LDMOS pulsed power transistor for TCAS and IFF applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit; tp =50 s; =2%. Mode of operati