BLF242 Todos los transistores

 

BLF242 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BLF242
   Tipo de FET: LDMOS
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 28 V
   |Id|ⓘ - Corriente continua de drenaje: 1 A

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
   Paquete / Cubierta: SOT123A

 Búsqueda de reemplazo de MOSFET BLF242

 

BLF242 Datasheet (PDF)

 ..1. Size:86K  philips
blf242.pdf

BLF242
BLF242

DISCRETE SEMICONDUCTORSDATA SHEETM3D065BLF242HF-VHF power MOS transistorProduct specification 2003 Oct 13Supersedes data of 1997 Dec 17Philips Semiconductors Product specificationHF-VHF power MOS transistor BLF242FEATURES PIN CONFIGURATION High power gain Low noisehandbook, halfpage Easy power control1 4 Good thermal stability Withstands full load

 ..2. Size:66K  philips
blf242 cnv 2.pdf

BLF242
BLF242

DISCRETE SEMICONDUCTORSDATA SHEETBLF242HF/VHF power MOS transistorSeptember 1992Product specificationPhilips Semiconductors Product specificationHF/VHF power MOS transistor BLF242FEATURES PIN CONFIGURATION High power gainhalfpage Low noise1 4 Easy power control Good thermal stability Withstands full load mismatchd Gold metallization ensures

 0.1. Size:300K  nxp
blf2425m7l250p 2425m7ls250p.pdf

BLF242
BLF242

BLF2425M7L250P; BLF2425M7LS250PPower LDMOS transistorRev. 4 12 July 2013 Product data sheet1. Product profile1.1 General description250 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz.The BLF2425M7L250P and BLF2425M7LS250P are designed for high-power CW applications and are assembled in high perfor

 9.1. Size:97K  philips
blf244.pdf

BLF242
BLF242

DISCRETE SEMICONDUCTORSDATA SHEETM3D065BLF244VHF power MOS transistorProduct specification 2003 Oct 13Supersedes data of 1997 Dec 17Philips Semiconductors Product specificationVHF power MOS transistor BLF244FEATURES PIN CONFIGURATION High power gain Low noise figurehandbook, halfpage Easy power control1 4 Good thermal stabilityd Withstands full

 9.2. Size:92K  philips
blf246b.pdf

BLF242
BLF242

DISCRETE SEMICONDUCTORSDATA SHEETandbook, halfpageM3D075BLF246BVHF push-pull power MOStransistorProduct specification 2003 Aug 04Supersedes data of 2001 Oct 10Philips Semiconductors Product specificationVHF push-pull power MOS transistor BLF246BFEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability2 4 6 8handbook, halfpage

 9.3. Size:69K  philips
blf246 3.pdf

BLF242
BLF242

DISCRETE SEMICONDUCTORSDATA SHEETBLF246VHF power MOS transistor1996 Oct 21Product specificationSupersedes data of September 1992Philips Semiconductors Product specificationVHF power MOS transistor BLF246FEATURES PINNING - SOT121 High power gainPIN SYMBOL DESCRIPTION Low noise figure1 d drain Easy power control2 s source Good thermal stability3 g ga

 9.4. Size:98K  philips
blf245.pdf

BLF242
BLF242

DISCRETE SEMICONDUCTORSDATA SHEETM3D065BLF245VHF power MOS transistorProduct specification 2003 Sep 02Supersedes data of 1997 Dec 17Philips Semiconductors Product specificationVHF power MOS transistor BLF245FEATURES PIN CONFIGURATION High power gainlfpage Low noise figure1 4 Easy power control Good thermal stabilityd Withstands full load mismatc

 9.5. Size:97K  philips
blf245b.pdf

BLF242
BLF242

DISCRETE SEMICONDUCTORSDATA SHEETM3D096BLF245BVHF push-pull power MOStransistorProduct specification 2000 Oct 17Supersedes data of 1998 Jan 08Philips Semiconductors Product specificationVHF push-pull power MOS transistor BLF245BFEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability1 4fpage Gold metallization ensures d2

 9.6. Size:75K  philips
blf247b.pdf

BLF242
BLF242

DISCRETE SEMICONDUCTORSDATA SHEETBLF247BVHF push-pull power MOStransistorAugust 1994Product specificationPhilips SemiconductorsPhilips Semiconductors Product specificationVHF push-pull power MOS transistor BLF247BFEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability1 2 Withstands full load mismatch.dgsAPPLICATIONS

 9.7. Size:73K  philips
blf245 cnv 3.pdf

BLF242
BLF242

DISCRETE SEMICONDUCTORSDATA SHEETBLF245VHF power MOS transistorSeptember 1992Product specificationPhilips Semiconductors Product specificationVHF power MOS transistor BLF245FEATURES PIN CONFIGURATION High power gainlfpage Low noise figure1 4 Easy power control Good thermal stabilityd Withstands full load mismatch.gsMBB072DESCRIPTIONSilic

 9.8. Size:106K  philips
blf248.pdf

BLF242
BLF242

DISCRETE SEMICONDUCTORSDATA SHEETM3D091BLF248VHF push-pull power MOStransistorProduct specification 2003 Sep 02Supersedes data of 1997 Dec 17Philips Semiconductors Product specificationVHF push-pull power MOS transistor BLF248FEATURES PIN CONFIGURATION High power gain Easy power control1 2 Good thermal stabilityd2halfpage Gold metallization ensures

 9.9. Size:74K  philips
blf244 cnv 2.pdf

BLF242
BLF242

DISCRETE SEMICONDUCTORSDATA SHEETBLF244VHF power MOS transistorSeptember 1992Product specificationPhilips Semiconductors Product specificationVHF power MOS transistor BLF244FEATURES PIN CONFIGURATION High power gain Low noise figure Easy power controlk, halfpage Good thermal stability1 4 Withstands full load mismatch Gold metallization ensures

 9.10. Size:83K  philips
blf248 cnv 2.pdf

BLF242
BLF242

DISCRETE SEMICONDUCTORSDATA SHEETBLF248VHF push-pull power MOStransistorSeptember 1992Product specificationPhilips Semiconductors Product specificationVHF push-pull power MOS transistor BLF248FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability1 2 Gold metallization ensuresd2halfpageexcellent reliability.g2sg1

 9.11. Size:93K  philips
blf246.pdf

BLF242
BLF242

DISCRETE SEMICONDUCTORSDATA SHEETM3D060BLF246VHF power MOS transistorProduct specification 2003 Aug 05Supersedes data of 1996 Oct 21Philips Semiconductors Product specificationVHF power MOS transistor BLF246FEATURES PINNING - SOT121B High power gainPIN DESCRIPTION Low noise figure1 drain Easy power control2 source Good thermal stability3 gate

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