BLF2425M7L250P Todos los transistores

 

BLF2425M7L250P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BLF2425M7L250P
   Tipo de FET: LDMOS
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 250 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 28 V
   |Id|ⓘ - Corriente continua de drenaje: 39 A

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
   Paquete / Cubierta: SOT539A
     - Selección de transistores por parámetros

 

BLF2425M7L250P Datasheet (PDF)

 ..1. Size:300K  nxp
blf2425m7l250p 2425m7ls250p.pdf pdf_icon

BLF2425M7L250P

BLF2425M7L250P; BLF2425M7LS250PPower LDMOS transistorRev. 4 12 July 2013 Product data sheet1. Product profile1.1 General description250 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz.The BLF2425M7L250P and BLF2425M7LS250P are designed for high-power CW applications and are assembled in high perfor

 8.1. Size:86K  philips
blf242.pdf pdf_icon

BLF2425M7L250P

DISCRETE SEMICONDUCTORSDATA SHEETM3D065BLF242HF-VHF power MOS transistorProduct specification 2003 Oct 13Supersedes data of 1997 Dec 17Philips Semiconductors Product specificationHF-VHF power MOS transistor BLF242FEATURES PIN CONFIGURATION High power gain Low noisehandbook, halfpage Easy power control1 4 Good thermal stability Withstands full load

 8.2. Size:66K  philips
blf242 cnv 2.pdf pdf_icon

BLF2425M7L250P

DISCRETE SEMICONDUCTORSDATA SHEETBLF242HF/VHF power MOS transistorSeptember 1992Product specificationPhilips Semiconductors Product specificationHF/VHF power MOS transistor BLF242FEATURES PIN CONFIGURATION High power gainhalfpage Low noise1 4 Easy power control Good thermal stability Withstands full load mismatchd Gold metallization ensures

 9.1. Size:97K  philips
blf244.pdf pdf_icon

BLF2425M7L250P

DISCRETE SEMICONDUCTORSDATA SHEETM3D065BLF244VHF power MOS transistorProduct specification 2003 Oct 13Supersedes data of 1997 Dec 17Philips Semiconductors Product specificationVHF power MOS transistor BLF244FEATURES PIN CONFIGURATION High power gain Low noise figurehandbook, halfpage Easy power control1 4 Good thermal stabilityd Withstands full

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History: NCE65TF099F | HUFA76423S3ST | P06P03LDG

 

 
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