BLF546 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BLF546
Tipo de FET: LDMOS
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 80 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 28 V
|Id|ⓘ - Corriente continua
de drenaje: 9 A
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
Encapsulados: SOT268A
Búsqueda de reemplazo de BLF546 MOSFET
- Selecciónⓘ de transistores por parámetros
BLF546 datasheet
..1. Size:91K philips
blf546.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET M3D092 BLF546 UHF push-pull power MOS transistor Product specification 2003 Sep 22 Supersedes data of 1998 Jan 09 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF546 FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliabi
..2. Size:72K philips
blf546 cnv 2.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET BLF546 UHF push-pull power MOS transistor October 1992 Product specification Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF546 FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability handbook, halfpage 1 4 d
9.1. Size:93K philips
blf548 cnv 3.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET BLF548 UHF push-pull power MOS transistor October 1992 Product specification Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF548 FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability 1 2 halfpage d2 Designed f
9.2. Size:80K philips
blf542 cnv 2.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET BLF542 UHF power MOS transistor October 1992 Product specification Philips Semiconductors Product specification UHF power MOS transistor BLF542 FEATURES PIN CONFIGURATION High power gain halfpage Easy power control Gold metallization Good thermal stability 1 2 Withstands full load mismatch d 3 4 Designed for broadband
9.3. Size:76K philips
blf543.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET BLF543 UHF power MOS transistor October 1992 Product specification Philips Semiconductors Product specification UHF power MOS transistor BLF543 FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability fpage Gold metallization ensures excellent reliability Designed for broadband operation. 1 2 d
9.4. Size:96K philips
blf544.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET M3D076 BLF544 UHF power MOS transistor Product specification 2003 Sep 18 Supersedes data of 1998 Jan 21 Philips Semiconductors Product specification UHF power MOS transistor BLF544 FEATURES PINNING - SOT171A High power gain PIN DESCRIPTION Easy power control 1 source Good thermal stability 2 source Gold metallization ensures ex
9.5. Size:104K philips
blf542.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET M3D076 BLF542 UHF power MOS transistor Product specification 2003 Sep 18 Supersedes data of 1998 Jan 08 Philips Semiconductors Product specification UHF power MOS transistor BLF542 FEATURES PINNING - SOT171A High power gain PIN DESCRIPTION Easy power control 1 source Good thermal stability 2 source Gold metallization ensures ex
9.6. Size:94K philips
blf544 cnv 2.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET M3D076 BLF544 UHF power MOS transistor 1998 Jan 21 Product specification Supersedes data of October 1992 Philips Semiconductors Product specification UHF power MOS transistor BLF544 FEATURES PINNING - SOT171A High power gain PIN SYMBOL DESCRIPTION Easy power control 1 s source Good thermal stability 2 s source Gold metallizati
9.7. Size:94K philips
blf547.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET BLF547 UHF push-pull power MOS transistor October 1992 Product specification Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF547 FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability 1 2 halfpage d2 Designed f
9.8. Size:116K philips
blf548.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET M3D091 BLF548 UHF push-pull power MOS transistor Product specification 2003 Sep 26 Supersedes data of Oct 1992 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF548 FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability 1 2 Gold metallization ensures halfpage d2 ex
9.9. Size:75K philips
blf544b cnv 2.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET BLF544B UHF push-pull power MOS transistor October 1992 Product specification Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF544B FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability Gold metallization ensures lfpage excellent reliability 24 d2 Designed fo
9.10. Size:75K philips
blf545.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET BLF545 UHF push-pull power MOS transistor October 1992 Product specification Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF545 FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability handbook, halfpage 1 4 d
Otros transistores... BLF368, BLF369, BLF3G21-30, BLF3G21-6, BLF404, BLF521, BLF542, BLF544, P60NF06, BLF548, BLF571, BLF573, BLF573S, BLF574, BLF578, BLF578XR, BLF642