BLF548 Todos los transistores

 

BLF548 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BLF548
   Tipo de FET: LDMOS
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 330 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 28 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
   Paquete / Cubierta: SOT262A2

 Búsqueda de reemplazo de MOSFET BLF548

 

BLF548 Datasheet (PDF)

 ..1. Size:93K  philips
blf548 cnv 3.pdf

BLF548
BLF548

DISCRETE SEMICONDUCTORSDATA SHEETBLF548UHF push-pull power MOStransistorOctober 1992Product specificationPhilips Semiconductors Product specificationUHF push-pull power MOS transistor BLF548FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability Gold metallization ensuresexcellent reliability1 2halfpage d2 Designed f

 ..2. Size:116K  philips
blf548.pdf

BLF548
BLF548

DISCRETE SEMICONDUCTORSDATA SHEETM3D091BLF548UHF push-pull power MOStransistorProduct specification 2003 Sep 26Supersedes data of Oct 1992Philips Semiconductors Product specificationUHF push-pull power MOS transistor BLF548FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability1 2 Gold metallization ensureshalfpage d2ex

 9.1. Size:91K  philips
blf546.pdf

BLF548
BLF548

DISCRETE SEMICONDUCTORSDATA SHEETM3D092BLF546UHF push-pull power MOStransistorProduct specification 2003 Sep 22Supersedes data of 1998 Jan 09Philips Semiconductors Product specificationUHF push-pull power MOS transistor BLF546FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability Gold metallization ensuresexcellent reliabi

 9.2. Size:80K  philips
blf542 cnv 2.pdf

BLF548
BLF548

DISCRETE SEMICONDUCTORSDATA SHEETBLF542UHF power MOS transistorOctober 1992Product specificationPhilips Semiconductors Product specificationUHF power MOS transistor BLF542FEATURES PIN CONFIGURATION High power gainhalfpage Easy power control Gold metallization Good thermal stability1 2 Withstands full load mismatchd3 4 Designed for broadband

 9.3. Size:76K  philips
blf543.pdf

BLF548
BLF548

DISCRETE SEMICONDUCTORSDATA SHEETBLF543UHF power MOS transistorOctober 1992Product specificationPhilips Semiconductors Product specificationUHF power MOS transistor BLF543FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stabilityfpage Gold metallization ensuresexcellent reliability Designed for broadband operation.1 2d

 9.4. Size:96K  philips
blf544.pdf

BLF548
BLF548

DISCRETE SEMICONDUCTORSDATA SHEETM3D076BLF544UHF power MOS transistorProduct specification 2003 Sep 18Supersedes data of 1998 Jan 21Philips Semiconductors Product specificationUHF power MOS transistor BLF544FEATURES PINNING - SOT171A High power gainPIN DESCRIPTION Easy power control1 source Good thermal stability2 source Gold metallization ensures ex

 9.5. Size:104K  philips
blf542.pdf

BLF548
BLF548

DISCRETE SEMICONDUCTORSDATA SHEETM3D076BLF542UHF power MOS transistorProduct specification 2003 Sep 18Supersedes data of 1998 Jan 08Philips Semiconductors Product specificationUHF power MOS transistor BLF542FEATURES PINNING - SOT171A High power gainPIN DESCRIPTION Easy power control1 source Good thermal stability2 source Gold metallization ensures ex

 9.6. Size:94K  philips
blf544 cnv 2.pdf

BLF548
BLF548

DISCRETE SEMICONDUCTORSDATA SHEETM3D076BLF544UHF power MOS transistor1998 Jan 21Product specificationSupersedes data of October 1992Philips Semiconductors Product specificationUHF power MOS transistor BLF544FEATURES PINNING - SOT171A High power gainPIN SYMBOL DESCRIPTION Easy power control1 s source Good thermal stability2 s source Gold metallizati

 9.7. Size:94K  philips
blf547.pdf

BLF548
BLF548

DISCRETE SEMICONDUCTORSDATA SHEETBLF547UHF push-pull power MOStransistorOctober 1992Product specificationPhilips Semiconductors Product specificationUHF push-pull power MOS transistor BLF547FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability Gold metallization ensuresexcellent reliability1 2halfpage d2 Designed f

 9.8. Size:75K  philips
blf544b cnv 2.pdf

BLF548
BLF548

DISCRETE SEMICONDUCTORSDATA SHEETBLF544BUHF push-pull power MOStransistorOctober 1992Product specificationPhilips Semiconductors Product specificationUHF push-pull power MOS transistor BLF544BFEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability Gold metallization ensureslfpageexcellent reliability 24d2 Designed fo

 9.9. Size:72K  philips
blf546 cnv 2.pdf

BLF548
BLF548

DISCRETE SEMICONDUCTORSDATA SHEETBLF546UHF push-pull power MOStransistorOctober 1992Product specificationPhilips Semiconductors Product specificationUHF push-pull power MOS transistor BLF546FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability Gold metallization ensuresexcellent reliabilityhandbook, halfpage1 4d

 9.10. Size:75K  philips
blf545.pdf

BLF548
BLF548

DISCRETE SEMICONDUCTORSDATA SHEETBLF545UHF push-pull power MOStransistorOctober 1992Product specificationPhilips Semiconductors Product specificationUHF push-pull power MOS transistor BLF545FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability Gold metallization ensuresexcellent reliabilityhandbook, halfpage1 4d

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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