BLF548 Todos los transistores

 

BLF548 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BLF548
   Tipo de FET: LDMOS
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 330 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 28 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
   Paquete / Cubierta: SOT262A2
 

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BLF548 Datasheet (PDF)

 ..1. Size:93K  philips
blf548 cnv 3.pdf pdf_icon

BLF548

DISCRETE SEMICONDUCTORSDATA SHEETBLF548UHF push-pull power MOStransistorOctober 1992Product specificationPhilips Semiconductors Product specificationUHF push-pull power MOS transistor BLF548FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability Gold metallization ensuresexcellent reliability1 2halfpage d2 Designed f

 ..2. Size:116K  philips
blf548.pdf pdf_icon

BLF548

DISCRETE SEMICONDUCTORSDATA SHEETM3D091BLF548UHF push-pull power MOStransistorProduct specification 2003 Sep 26Supersedes data of Oct 1992Philips Semiconductors Product specificationUHF push-pull power MOS transistor BLF548FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability1 2 Gold metallization ensureshalfpage d2ex

 9.1. Size:91K  philips
blf546.pdf pdf_icon

BLF548

DISCRETE SEMICONDUCTORSDATA SHEETM3D092BLF546UHF push-pull power MOStransistorProduct specification 2003 Sep 22Supersedes data of 1998 Jan 09Philips Semiconductors Product specificationUHF push-pull power MOS transistor BLF546FEATURES PIN CONFIGURATION High power gain Easy power control Good thermal stability Gold metallization ensuresexcellent reliabi

 9.2. Size:80K  philips
blf542 cnv 2.pdf pdf_icon

BLF548

DISCRETE SEMICONDUCTORSDATA SHEETBLF542UHF power MOS transistorOctober 1992Product specificationPhilips Semiconductors Product specificationUHF power MOS transistor BLF542FEATURES PIN CONFIGURATION High power gainhalfpage Easy power control Gold metallization Good thermal stability1 2 Withstands full load mismatchd3 4 Designed for broadband

Otros transistores... BLF369 , BLF3G21-30 , BLF3G21-6 , BLF404 , BLF521 , BLF542 , BLF544 , BLF546 , IRF520 , BLF571 , BLF573 , BLF573S , BLF574 , BLF578 , BLF578XR , BLF642 , BLF645 .

History: 2N5640 | FMI13N60E | DM10N65C-2

 

 
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