BLF6G10LS-160RN MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BLF6G10LS-160RN datasheet

0.1. Size:154K philips
blf6g10-160rn blf6g10ls-160rn.pdf pdf_icon

BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 02 21 January 2010 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) G

3.1. Size:145K philips
blf6g10-135rn blf6g10ls-135rn.pdf pdf_icon

BLF6G10-135RN; BLF6G10LS-135RN Power LDMOS transistor Rev. 02 21 January 2010 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) G

4.1. Size:161K philips
blf6g10-200rn blf6g10ls-200rn.pdf pdf_icon

BLF6G10-200RN; BLF6G10LS-200RN Power LDMOS transistor Rev. 02 21 January 2010 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) G

Otros transistores... BLF647 , BLF6G10-135RN , BLF6G10-160RN , BLF6G10-200RN , BLF6G10-45 , BLF6G10L-260PRN , BLF6G10L-40BRN , BLF6G10LS-135RN , AOD4184A , BLF6G10LS-200RN , BLF6G10LS-260PRN , BLF6G10S-45 , BLF6G13L-250P , BLF6G13LS-250P , BLF6G15L-250PBRN , BLF6G15L-40BRN , BLF6G15L-500H .