BLF6G10LS-260PRN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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BLF6G10LS-260PRN Datasheet (PDF)

1.1. blf6g10-160rn blf6g10ls-160rn.pdf Size:154K _philips

BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 02 � 21 January 2010 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 �C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp ?D A

1.2. blf6g10-200rn blf6g10ls-200rn.pdf Size:161K _philips

BLF6G10-200RN; BLF6G10LS-200RN Power LDMOS transistor Rev. 02 � 21 January 2010 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 �C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp ?D A

 1.3. blf6g10-135rn blf6g10ls-135rn.pdf Size:145K _philips

BLF6G10-135RN; BLF6G10LS-135RN Power LDMOS transistor Rev. 02 � 21 January 2010 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 �C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp ?D A

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