BLF6G15L-500H Todos los transistores

 ..1. Size:696K  nxp
 blf6g15l-500h 6g15ls-500h.pdf

BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor Rev. 3 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 65 W average DVB-T at 1.5 GHz. The excellent ruggedness of this device makes it ideal

 5.1. Size:288K  philips
 blf6g15l-40brn.pdf

BLF6G15L-40BRN Power LDMOS transistor Rev. 2 12 November 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D ACPR (MHz)

 5.2. Size:311K  nxp
 blf6g15l-250pbrn.pdf

BLF6G15L-250PBRN Power LDMOS transistor Rev. 2 3 November 2010 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D ACPR (MH

 8.1. Size:154K  philips
 blf6g10-160rn blf6g10ls-160rn.pdf

BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 02 21 January 2010 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) G

 8.2. Size:135K  philips
 blf6g10s-45.pdf

BLF6G10S-45 Power LDMOS transistor Rev. 03 20 January 2010 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D ACPR (MHz

 8.3. Size:145K  philips
 blf6g10-135rn blf6g10ls-135rn.pdf

BLF6G10-135RN; BLF6G10LS-135RN Power LDMOS transistor Rev. 02 21 January 2010 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) G

 8.4. Size:161K  philips
 blf6g10-200rn blf6g10ls-200rn.pdf

BLF6G10-200RN; BLF6G10LS-200RN Power LDMOS transistor Rev. 02 21 January 2010 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) G

 8.5. Size:345K  philips
 blf6g10l-260prn ls-260prn.pdf

BLF6G10L-260PRN; BLF6G10LS-260PRN Power LDMOS transistor Rev. 1 12 August 2010 Product data sheet 1. Product profile 1.1 General description 260 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV)

 8.6. Size:169K  nxp
 blf6g10-45.pdf

BLF6G10-45 Power LDMOS transistor Rev. 3 11 March 2013 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D ACPR (MHz)

 8.7. Size:272K  nxp
 blf6g10l-40brn.pdf

BLF6G10L-40BRN Power LDMOS transistor Rev. 3 16 November 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D ACPR (MHz) (V)

 8.8. Size:149K  nxp
 blf6g13l-250p 6g13ls-250p.pdf

BLF6G13L-250P; BLF6G13LS-250P Power LDMOS transistor Rev. 3 14 October 2011 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz. Table 1. Test information Typical RF performance at Tcase =25 C; IDq = 100 mA; in a class-AB production test circuit. Mode of operation f VDS PL(1dB) Gp D