BLF6G27-45 Todos los transistores

 

BLF6G27-45 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BLF6G27-45

Tipo de FET: LDMOS

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 45 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 28 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.24 Ohm

Encapsulados: SOT608A

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BLF6G27-45 datasheet

 ..1. Size:124K  philips
blf6g27-45 blf6g27s-45.pdf pdf_icon

BLF6G27-45

BLF6G27-45; BLF6G27S-45 WiMAX power LDMOS transistor Rev. 03 15 December 2008 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D ACPR8

 6.1. Size:277K  philips
blf6g27-75 6g27ls-75.pdf pdf_icon

BLF6G27-45

BLF6G27-75; BLF6G27LS-75 WiMAX power LDMOS transistor Rev. 01 22 October 2009 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) PL(M) Gp D

 6.2. Size:299K  philips
blf6g27-100 blf6g27ls-100.pdf pdf_icon

BLF6G27-45

BLF6G27-100; BLF6G27LS-100 WiMAX power LDMOS transistor Rev. 02 8 July 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase =25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D

 6.3. Size:92K  philips
blf6g27-135 blf6g27ls-135.pdf pdf_icon

BLF6G27-45

BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 02 26 May 2008 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase =25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) PL(p)

Otros transistores... BLF6G22LS-180RN , BLF6G22LS-40P , BLF6G22LS-75 , BLF6G22S-45 , BLF6G27-10 , BLF6G27-100 , BLF6G27-10G , BLF6G27-135 , IRF4905 , BLF6G27-75 , BLF6G27L-40P , BLF6G27L-50BN , BLF6G27LS-100 , BLF6G27LS-135 , BLF6G27LS-40P , BLF6G27LS-50BN , BLF6G27LS-75 .

 

 

 


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