BLF6G27LS-50BN Todos los transistores

 

BLF6G27LS-50BN MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BLF6G27LS-50BN

Tipo de FET: LDMOS

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 28 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.25 Ohm

Encapsulados: SOT1112B

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BLF6G27LS-50BN datasheet

 ..1. Size:218K  philips
blf6g27l-50bn blf6g27ls-50bn.pdf pdf_icon

BLF6G27LS-50BN

BLF6G27L-50BN; BLF6G27LS-50BN Power LDMOS transistor Rev. 2 7 April 2011 Product data sheet 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(

 4.1. Size:299K  philips
blf6g27-100 blf6g27ls-100.pdf pdf_icon

BLF6G27LS-50BN

BLF6G27-100; BLF6G27LS-100 WiMAX power LDMOS transistor Rev. 02 8 July 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase =25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D

 4.2. Size:92K  philips
blf6g27-135 blf6g27ls-135.pdf pdf_icon

BLF6G27LS-50BN

BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 02 26 May 2008 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase =25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) PL(p)

 6.1. Size:251K  nxp
blf6g27l-40p 27ls-40p 27ls-40pg.pdf pdf_icon

BLF6G27LS-50BN

BLF6G27L-40P; BLF6G27LS-40P(G) Power LDMOS transistor Rev. 3 14 January 2015 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz, also suitable for operation at 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source

Otros transistores... BLF6G27-135 , BLF6G27-45 , BLF6G27-75 , BLF6G27L-40P , BLF6G27L-50BN , BLF6G27LS-100 , BLF6G27LS-135 , BLF6G27LS-40P , SKD502T , BLF6G27LS-75 , BLF6G27S-45 , BLF6G38-10 , BLF6G38-100 , BLF6G38-10G , BLF6G38-25 , BLF6G38-50 , BLF6G38LS-100 .

History: BUK662R5-30C | BLF6G27LS-40P

 

 

 

 

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