BLF7G15LS-300P Todos los transistores

 ..1. Size:303K  philips
 blf7g15ls-300p.pdf

BLF7G15LS-300P Power LDMOS transistor Rev. 2 3 December 2010 Product data sheet 1. Product profile 1.1 General description 300 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) G

 4.1. Size:249K  philips
 blf7g15ls-200.pdf

BLF7G15LS-200 Power LDMOS transistor Rev. 2 1 March 2011 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV)

 8.1. Size:708K  nxp
 blf7g10l-250 7g10ls-250.pdf

BLF7G10L-250; BLF7G10LS-250 Power LDMOS transistor Rev. 4 13 September 2012 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 869 MHz to 960 MHz. Table 1. Typical performance Test signal 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing =

 9.1. Size:165K  philips
 blf7g27l-100 blf7g27ls-100.pdf

BLF7G27L-100; BLF7G27LS-100 Power LDMOS transistor Rev. 2 5 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f

 9.2. Size:522K  philips
 blf7g20l-250p 7g20ls-250p.pdf

BLF7G20L-250P; BLF7G20LS-250P Power LDMOS transistor Rev. 3 1 March 2011 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f I

 9.3. Size:422K  philips
 blf7g20ls-140p.pdf

BLF7G20LS-140P Power LDMOS transistor Rev. 2 17 August 2010 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp

 9.4. Size:282K  philips
 blf7g20l-200 7g20ls-200.pdf

BLF7G20L-200; BLF7G20LS-200 Power LDMOS transistor Rev. 3 1 March 2011 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f

 9.5. Size:100K  philips
 blf7g20l-160p blf7g20ls-160p.pdf

BLF7G20L-160P; BLF7G20LS-160P Power LDMOS transistor Rev. 01 22 June 2010 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f

 9.6. Size:289K  philips
 blf7g27l-75p blf7g27ls-75p.pdf

BLF7G27L-75P; BLF7G27LS-75P Power LDMOS transistor Rev. 2 14 July 2010 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq

 9.7. Size:210K  philips
 blf7g20l-90p blf7g20ls-90p.pdf

BLF7G20L-90P; BLF7G20LS-90P Power LDMOS transistor Rev. 01 28 April 2010 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq

 9.8. Size:199K  philips
 blf7g22l-200 blf7g22ls-200.pdf

BLF7G22L-200; BLF7G22LS-200 Power LDMOS transistor Rev. 3 1 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f

 9.9. Size:304K  philips
 blf7g27l-150p 7g27ls-150p.pdf

BLF7G27L-150P; BLF7G27LS-150P Power LDMOS transistor Rev. 1 12 November 2010 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation

 9.10. Size:273K  nxp
 blf7g27l-135.pdf

 9.11. Size:693K  nxp
 blf7g22l-100p blf7g22ls-100p.pdf

BLF7G22L-100P; BLF7G22LS-100P Power LDMOS transistor Rev. 3 2 January 2012 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq V

 9.12. Size:194K  nxp
 blf7g21l-160p 7g21ls-160p.pdf

BLF7G21L-160P; BLF7G21LS-160P Power LDMOS transistor Rev. 3 10 February 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2050 MHz, also suitable for operation at 1495 MHz to 1511 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source

 9.13. Size:171K  nxp
 blf7g27l-140 7g27ls-140.pdf

BLF7G27L-140; BLF7G27LS-140 Power LDMOS transistor Rev. 3 22 July 2011 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq

 9.14. Size:140K  nxp
 blf7g24l-100 7g24ls-100.pdf

BLF7G24L-100; BLF7G24LS-100 Power LDMOS transistor Rev. 4 22 July 2011 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq

 9.15. Size:972K  nxp
 blf7g27l-90p blf7g27ls-90p.pdf

BLF7G27L-90P; BLF7G27LS-90P Power LDMOS transistor Rev. 2 10 November 2011 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f

 9.16. Size:300K  nxp
 blf7g27l-200pb.pdf

BLF7G27L-200PB Power LDMOS transistor Rev. 2 20 February 2012 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV)

 9.17. Size:168K  nxp
 blf7g22l-130 7g22ls-130.pdf

BLF7G22L-130; BLF7G22LS-130 Power LDMOS transistor Rev. 4 20 January 2011 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f I

 9.18. Size:978K  nxp
 blf7g22l-250p 22ls-250p.pdf

BLF7G22L-250P; BLF7G22LS-250P Power LDMOS transistor Rev. 3 12 July 2013 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f I

 9.19. Size:1126K  nxp
 blf7g22l-160 7g22ls-160.pdf

BLF7G22L-160; BLF7G22LS-160 Power LDMOS transistor Rev. 2.1 2 November 2011 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation

 9.20. Size:142K  nxp
 blf7g24l-140 7g24ls-140.pdf

BLF7G24L-140; BLF7G24LS-140 Power LDMOS transistor Rev. 3 1 August 2011 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f ID