BLF7G20LS-200 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BLF7G20LS-200
Tipo de FET: LDMOS
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 200 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 28 V
|Id|ⓘ - Corriente continua de drenaje: 50 A
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.093 Ohm
Paquete / Cubierta: SOT502B
Búsqueda de reemplazo de BLF7G20LS-200 MOSFET
BLF7G20LS-200 Datasheet (PDF)
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blf7g20l-160p blf7g20ls-160p.pdf

BLF7G20L-160P; BLF7G20LS-160PPower LDMOS transistorRev. 01 22 June 2010 Objective data sheet1. Product profile1.1 General description160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f
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BLF7G20L-90P; BLF7G20LS-90PPower LDMOS transistorRev. 01 28 April 2010 Product data sheet1. Product profile1.1 General description90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f IDq
Otros transistores... BLF7G10L-250 , BLF7G10LS-250 , BLF7G15LS-200 , BLF7G15LS-300P , BLF7G20L-200 , BLF7G20L-250P , BLF7G20L-90P , BLF7G20LS-140P , IRFP250 , BLF7G20LS-250P , BLF7G20LS-90P , BLF7G21L-160P , BLF7G21LS-160P , BLF7G22L-100P , BLF7G22L-130 , BLF7G22L-160 , BLF7G22L-200 .



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