BLF7G20LS-200 Todos los transistores

 

BLF7G20LS-200 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BLF7G20LS-200
   Tipo de FET: LDMOS
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 200 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 28 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.093 Ohm
   Paquete / Cubierta: SOT502B

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BLF7G20LS-200 Datasheet (PDF)

 4.1. Size:422K  philips
blf7g20ls-140p.pdf

BLF7G20LS-200 BLF7G20LS-200

BLF7G20LS-140PPower LDMOS transistorRev. 2 17 August 2010 Product data sheet1. Product profile1.1 General description140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f IDq VDS PL(AV) Gp

 4.2. Size:100K  philips
blf7g20l-160p blf7g20ls-160p.pdf

BLF7G20LS-200 BLF7G20LS-200

BLF7G20L-160P; BLF7G20LS-160PPower LDMOS transistorRev. 01 22 June 2010 Objective data sheet1. Product profile1.1 General description160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f

 4.3. Size:210K  philips
blf7g20l-90p blf7g20ls-90p.pdf

BLF7G20LS-200 BLF7G20LS-200

BLF7G20L-90P; BLF7G20LS-90PPower LDMOS transistorRev. 01 28 April 2010 Product data sheet1. Product profile1.1 General description90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f IDq

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