BLF7G20LS-90P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BLF7G20LS-90P
Tipo de FET: LDMOS
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 90 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 28 V
|Id|ⓘ - Corriente continua de drenaje: 18 A
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm
Paquete / Cubierta: SOT1121B
Búsqueda de reemplazo de MOSFET BLF7G20LS-90P
BLF7G20LS-90P Datasheet (PDF)
blf7g20l-90p blf7g20ls-90p.pdf
BLF7G20L-90P; BLF7G20LS-90PPower LDMOS transistorRev. 01 28 April 2010 Product data sheet1. Product profile1.1 General description90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f IDq
blf7g20ls-140p.pdf
BLF7G20LS-140PPower LDMOS transistorRev. 2 17 August 2010 Product data sheet1. Product profile1.1 General description140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f IDq VDS PL(AV) Gp
blf7g20l-160p blf7g20ls-160p.pdf
BLF7G20L-160P; BLF7G20LS-160PPower LDMOS transistorRev. 01 22 June 2010 Objective data sheet1. Product profile1.1 General description160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f
blf7g20l-250p 7g20ls-250p.pdf
BLF7G20L-250P; BLF7G20LS-250PPower LDMOS transistorRev. 3 1 March 2011 Product data sheet1. Product profile1.1 General description250 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f I
blf7g20l-200 7g20ls-200.pdf
BLF7G20L-200; BLF7G20LS-200Power LDMOS transistorRev. 3 1 March 2011 Preliminary data sheet1. Product profile1.1 General description200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Liste
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