BLF7G22L-130 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BLF7G22L-130
   Tipo de FET: LDMOS
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 130 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 28 V
   |Id|ⓘ - Corriente continua de drenaje: 28 A

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.3 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: SOT502A

Búsqueda de reemplazo de MOSFET BLF7G22L-130

BLF7G22L-130 Datasheet (PDF)

..1. Size:168K nxp
blf7g22l-130 7g22ls-130.pdf

BLF7G22L-130; BLF7G22LS-130Power LDMOS transistorRev. 4 20 January 2011 Product data sheet1. Product profile1.1 General description130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f I

4.1. Size:693K nxp
blf7g22l-100p blf7g22ls-100p.pdf

BLF7G22L-100P; BLF7G22LS-100PPower LDMOS transistorRev. 3 2 January 2012 Product data sheet1. Product profile1.1 General description100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Test signal f IDq V

4.2. Size:1126K nxp
blf7g22l-160 7g22ls-160.pdf

BLF7G22L-160; BLF7G22LS-160Power LDMOS transistorRev. 2.1 2 November 2011 Product data sheet1. Product profile1.1 General description160 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation

5.1. Size:199K philips
blf7g22l-200 blf7g22ls-200.pdf

BLF7G22L-200; BLF7G22LS-200Power LDMOS transistorRev. 3 1 April 2011 Preliminary data sheet1. Product profile1.1 General description200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f

5.2. Size:978K nxp
blf7g22l-250p 22ls-250p.pdf

BLF7G22L-250P; BLF7G22LS-250PPower LDMOS transistorRev. 3 12 July 2013 Product data sheet1. Product profile1.1 General description250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f I

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: