BLF7G22L-160 Todos los transistores

Introduzca al menos 3 números o letras

BLF7G22L-160 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BLF7G22L-160

Tipo de FET: LDMOS

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 160 W

Tensión drenaje-fuente (Vds): 28 V

Corriente continua de drenaje (Id): 36 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.06 Ohm

Empaquetado / Estuche: SOT502A

Búsqueda de reemplazo de MOSFET BLF7G22L-160

 

BLF7G22L-160 Datasheet (PDF)

1.1. blf7g22l-200 blf7g22ls-200.pdf Size:199K _philips

BLF7G22L-160
BLF7G22L-160

BLF7G22L-200; BLF7G22LS-200 Power LDMOS transistor Rev. 3 1 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VD

1.2. blf7g22l-250p 22ls-250p.pdf Size:978K _nxp

BLF7G22L-160
BLF7G22L-160

BLF7G22L-250P; BLF7G22LS-250P Power LDMOS transistor Rev. 3 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f I

1.3. blf7g22l-160 7g22ls-160.pdf Size:1126K _nxp

BLF7G22L-160
BLF7G22L-160

BLF7G22L-160; BLF7G22LS-160 Power LDMOS transistor Rev. 2.1 — 2 November 2011 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation

1.4. blf7g22l-100p blf7g22ls-100p.pdf Size:693K _nxp

BLF7G22L-160
BLF7G22L-160

BLF7G22L-100P; BLF7G22LS-100P Power LDMOS transistor Rev. 3 — 2 January 2012 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq V

1.5. blf7g22l-130 7g22ls-130.pdf Size:168K _nxp

BLF7G22L-160
BLF7G22L-160

BLF7G22L-130; BLF7G22LS-130 Power LDMOS transistor Rev. 4 — 20 January 2011 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation f I

Otros transistores... BLF7G20LS-140P , BLF7G20LS-200 , BLF7G20LS-250P , BLF7G20LS-90P , BLF7G21L-160P , BLF7G21LS-160P , BLF7G22L-100P , BLF7G22L-130 , IRFP260N , BLF7G22L-200 , BLF7G22L-250P , BLF7G22LS-100P , BLF7G22LS-130 , BLF7G22LS-160 , BLF7G22LS-200 , BLF7G22LS-250P , BLF7G24L-100 .

 


BLF7G22L-160
  BLF7G22L-160
  BLF7G22L-160
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: IRLIZ44NPBF | IRLIZ44GPBF | IRLIZ34NPBF | IRLIZ34GPBF | IRLIZ24NPBF | IRLIZ14GPBF | IRLIB9343PBF | IRLIB4343 | IRLI640GPBF | IRLI630GPBF | IRLI620GPBF | IRLI540NPBF | IRLI540GPBF | IRLI540G | IRLI530GPBF |

Introduzca al menos 1 números o letras