BLF7G27LS-150P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BLF7G27LS-150P
Tipo de FET: LDMOS
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 150 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 28 V
|Id|ⓘ - Corriente continua de drenaje: 37 A
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm
Paquete / Cubierta: SOT539B
Búsqueda de reemplazo de BLF7G27LS-150P MOSFET
BLF7G27LS-150P Datasheet (PDF)
blf7g27l-100 blf7g27ls-100.pdf

BLF7G27L-100; BLF7G27LS-100Power LDMOS transistorRev. 2 5 April 2011 Preliminary data sheet1. Product profile1.1 General description100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f
blf7g27l-75p blf7g27ls-75p.pdf

BLF7G27L-75P; BLF7G27LS-75PPower LDMOS transistorRev. 2 14 July 2010 Product data sheet1. Product profile1.1 General description75 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f IDq
blf7g27l-90p blf7g27ls-90p.pdf

BLF7G27L-90P; BLF7G27LS-90PPower LDMOS transistorRev. 2 10 November 2011 Product data sheet1. Product profile1.1 General description90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f
Otros transistores... BLF7G27L-135 , BLF7G27L-140 , BLF7G27L-150P , BLF7G27L-200PB , BLF7G27L-75P , BLF7G27L-90P , BLF7G27LS-100 , BLF7G27LS-140 , 8N60 , BLF7G27LS-200PB , BLF7G27LS-75P , BLF7G27LS-90P , BLF861A , BLF871 , BLF871S , BLF878 , BLF879P .
History: MDP12N50BTH
History: MDP12N50BTH



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