BLF881S Todos los transistores

Introduzca al menos 3 números o letras

BLF881S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BLF881S

Tipo de FET: LDMOS

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 140 W

Tensión drenaje-fuente (Vds): 50 V

Corriente continua de drenaje (Id): 21 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.21 Ohm

Empaquetado / Estuche: SOT467B

Búsqueda de reemplazo de MOSFET BLF881S

BLF881S Datasheet (PDF)

1.1. blf881_blf881s.pdf Size:193K _philips

BLF881S
BLF881S

BLF881; BLF881S UHF power LDMOS transistor Rev. 3 7 December 2010 Product data sheet 1. Product profile 1.1 General description A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter a

5.1. blf888.pdf Size:164K _philips

BLF881S
BLF881S

BLF888 UHF power LDMOS transistor Rev. 5 21 January 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W average DVB-T broadband over the full UHF band from 470 MHz to 860 MHz. The excellent rugge

5.2. blf888a_blf888as.pdf Size:519K _nxp

BLF881S
BLF881S

BLF888A; BLF888AS UHF power LDMOS transistor Rev. 5 — 4 November 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performanc

5.3. blf888b_blf888bs.pdf Size:859K _nxp

BLF881S
BLF881S

BLF888B; BLF888BS UHF power LDMOS transistor Rev. 2 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 650 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performance a

5.4. blf884p_blf884ps.pdf Size:416K _nxp

BLF881S
BLF881S

BLF884P; BLF884PS UHF power LDMOS transistor Rev. 2 — 16 December 2011 Product data sheet 1. Product profile 1.1 General description A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performan

Otros transistores... BLF7G27LS-75P , BLF7G27LS-90P , BLF861A , BLF871 , BLF871S , BLF878 , BLF879P , BLF881 , 2SK2837 , BLF884P , BLF884PS , BLF888 , BLF888A , BLF888AS , BLF888B , BLF888BS , BLF8G10L-160 .

 


BLF881S
  BLF881S
  BLF881S
  BLF881S
 
BLF881S
  BLF881S
  BLF881S
  BLF881S
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: 2SJ683 | 2SJ673 | 2SJ661-DL-E | 2SJ661-DL-1E | 2SJ661-1E | 2SJ652-1E | 2SJ651 | 2SJ650 | 2V7002W | 2V7002L | 2V7002K | 2SJ690 | 2SJ687-ZK | 2SJ687 | 2SJ174 |

Introduzca al menos 1 números o letras