BLF888 Todos los transistores

 

BLF888 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BLF888
   Tipo de FET: LDMOS
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 500 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
   |Id|ⓘ - Corriente continua de drenaje: 43 A

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.105 Ohm
   Paquete / Cubierta: SOT979A

 Búsqueda de reemplazo de MOSFET BLF888

 

BLF888 Datasheet (PDF)

 ..1. Size:164K  philips
blf888.pdf

BLF888
BLF888

BLF888UHF power LDMOS transistorRev. 5 21 January 2011 Product data sheet1. Product profile1.1 General descriptionA 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W average DVB-T broadband over the full UHF band from 470 MHz to 860 MHz. The excellent

 0.1. Size:519K  nxp
blf888a blf888as.pdf

BLF888
BLF888

BLF888A; BLF888ASUHF power LDMOS transistorRev. 5 4 November 2013 Product data sheet1. Product profile1.1 General descriptionA 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.Table 1. Application informationRF performanc

 0.2. Size:859K  nxp
blf888b blf888bs.pdf

BLF888
BLF888

BLF888B; BLF888BSUHF power LDMOS transistorRev. 2 12 July 2013 Product data sheet1. Product profile1.1 General descriptionA 650 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.Table 1. Application informationRF performance a

 9.1. Size:193K  philips
blf881 blf881s.pdf

BLF888
BLF888

BLF881; BLF881SUHF power LDMOS transistorRev. 3 7 December 2010 Product data sheet1. Product profile1.1 General descriptionA 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmit

 9.2. Size:416K  nxp
blf884p blf884ps.pdf

BLF888
BLF888

BLF884P; BLF884PSUHF power LDMOS transistorRev. 2 16 December 2011 Product data sheet1. Product profile1.1 General descriptionA 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.Table 1. Application informationRF performan

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