BLM6G22-30G Todos los transistores

 

BLM6G22-30G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BLM6G22-30G

Tipo de FET: LDMOS

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 30 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 28 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

CARACTERÍSTICAS ELÉCTRICAS

Encapsulados: SOT822-1

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BLM6G22-30G datasheet

 ..1. Size:154K  philips
 blm6g22-30 blm6g22-30g.pdf pdf_icon

BLM6G22-30G

BLM6G22-30; BLM6G22-30G W-CDMA 2100 MHz to 2200 MHz power MMIC Rev. 4 7 March 2011 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 2100 MHz to 2200 MHz. Available in gull wing for surface mount (SOT822-1) or flat lead (SOT834-1). Table 1. Typical performance Typical RF performance at Th

 9.1. Size:681K  philips
 blm6g10-30 blm6g10-30g.pdf pdf_icon

BLM6G22-30G

BLM6G10-30; BLM6G10-30G W-CDMA 860 MHz - 960 MHz power MMIC Rev. 2 1 March 2011 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 860 MHz to 960 MHz. Available in Gull Wing for surface mount (SOT822-1) or flat lead (SOT834-1). Table 1. Application information Typical RF performance at Th =

Otros transistores... BLL6H0514L-130 , BLL6H0514LS-130 , BLL6H1214-500 , BLL6H1214L-250 , BLL6H1214LS-250 , BLM6G10-30 , BLM6G10-30G , BLM6G22-30 , AON6414A , 2SK1745 , 2SK60 , 2SJ238 , BLS2933-100 , BLS6G2731-120 , BLS6G2731-6G , 2SJ559 , BLS6G2731S-120 .

History: SWP19N10 | BLL6H1214-500

 

 

 

 

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