BLS6G2731S-130 Todos los transistores

 ..1. Size:134K  nxp
 bls6g2731s-130.pdf

BLS6G2731S-130 LDMOS S-band radar power transistor Rev. 2 18 November 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at Tcase =25 C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mod

 5.1. Size:70K  philips
 bls6g2731-6g.pdf

BLS6G2731-6G LDMOS S-Band radar power transistor Rev. 01 19 February 2009 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at Tcase =25 C; tp = 100 s; = 10 %; IDq = 25 mA; in a class-AB production test circuit. Mode of

 5.2. Size:74K  nxp
 bls6g2731-120 6g2731s-120.pdf

BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor Rev. 01 14 November 2008 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at Tcase =25 C; tp = 100 s; = 10 %; IDq = 100 mA; in a class-AB production te

 6.1. Size:681K  nxp
 bls6g2735l-30 bls6g2735ls-30.pdf

BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor Rev. 3 24 September 2012 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz. Table 1. Application information Typical RF performance at Tcase =25 C; tp = 300 s; = 10 %; IDq = 50 mA. Test signal f VDS PL