BLS6G3135S-120 Todos los transistores

 ..1. Size:77K  philips
 bls6g3135-120 bls6g3135s-120.pdf

BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor Rev. 02 29 May 2008 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Typical RF performance at Tcase =25 C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test ci

 5.1. Size:230K  philips
 bls6g3135-20 6g3135s-20.pdf

BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor Rev. 03 3 March 2009 Product data sheet 1. Product profile 1.1 General description 20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Typical RF performance at Tcase =25 C; tp = 300 s; = 10 %; IDq = 50 mA; in a class-AB production test circu

 9.1. Size:70K  philips
 bls6g2731-6g.pdf

BLS6G2731-6G LDMOS S-Band radar power transistor Rev. 01 19 February 2009 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at Tcase =25 C; tp = 100 s; = 10 %; IDq = 25 mA; in a class-AB production test circuit. Mode of

 9.2. Size:135K  philips
 bls6g2933s-130.pdf

BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 03 3 March 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance Typical RF performance at Tcase =25 C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode o

 9.3. Size:100K  nxp
 bls6g2933p-200.pdf

BLS6G2933P-200 LDMOS S-Band radar pallet amplifier Rev. 01 28 May 2010 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS amplifier pallet intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB test circuit. Mode of operation f VDS PL(1dB) Gp D IDq (GHz)

 9.4. Size:74K  nxp
 bls6g2731-120 6g2731s-120.pdf

BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor Rev. 01 14 November 2008 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at Tcase =25 C; tp = 100 s; = 10 %; IDq = 100 mA; in a class-AB production te

 9.5. Size:134K  nxp
 bls6g2731s-130.pdf

BLS6G2731S-130 LDMOS S-band radar power transistor Rev. 2 18 November 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at Tcase =25 C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mod

 9.6. Size:681K  nxp
 bls6g2735l-30 bls6g2735ls-30.pdf

BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor Rev. 3 24 September 2012 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz. Table 1. Application information Typical RF performance at Tcase =25 C; tp = 300 s; = 10 %; IDq = 50 mA. Test signal f VDS PL