BLS7G2729LS-350P Todos los transistores

 

BLS7G2729LS-350P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BLS7G2729LS-350P
   Tipo de FET: LDMOS
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 350 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 32 V
   |Id|ⓘ - Corriente continua de drenaje: 39 A

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm
   Paquete / Cubierta: SOT539B

 Búsqueda de reemplazo de MOSFET BLS7G2729LS-350P

 

BLS7G2729LS-350P Datasheet (PDF)

 4.1. Size:166K  nxp
bls7g2729l-350p ls-350p.pdf

BLS7G2729LS-350P
BLS7G2729LS-350P

BLS7G2729L-350P; BLS7G2729LS-350PLDMOS S-band radar power transistorRev. 5 16 May 2014 Product data sheet1. Product profile1.1 General description350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz.Table 1. Typical performanceTypical RF performance at Tcase =25C; tp = 300 s; = 10 %; IDq = 200 mA; in a class-AB

 8.1. Size:121K  nxp
bls7g2933s-150.pdf

BLS7G2729LS-350P
BLS7G2729LS-350P

BLS7G2933S-150LDMOS S-band radar power transistorRev. 2 23 February 2011 Product data sheet1. Product profile1.1 General description150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range.Table 1. Typical performanceTypical RF performance at Tcase =25C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit.Mod

 8.2. Size:292K  nxp
bls7g2325l-105.pdf

BLS7G2729LS-350P
BLS7G2729LS-350P

BLS7G2325L-105Power LDMOS transistorRev. 2 19 July 2011 Product data sheet1. Product profile1.1 General description105 W LDMOS power transistor for S-band radar applications at frequencies from 2300 MHz to 2500 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f IDq VDS PL(AV) Gp

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