BSH201 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSH201
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.417 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm
Encapsulados: TO236AB
Búsqueda de reemplazo de BSH201 MOSFET
- Selecciónⓘ de transistores por parámetros
BSH201 datasheet
bsh201 3.pdf
Philips Semiconductors Product specification P-channel enhancement mode BSH201 MOS transistor FEATURES SYMBOL QUICK REFERENCE DATA s Low threshold voltage VDS = -60 V Fast switching Logic level compatible ID = -0.3 A g Subminiature surface mount package RDS(ON) 2.5 (VGS = -10 V) d GENERAL DESCRIPTION PINNING SOT23 P-channel, enhancement mode, PIN DESCRIPTI
bsh201.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
bsh202 3.pdf
Philips Semiconductors Product specification P-channel enhancement mode BSH202 MOS transistor FEATURES SYMBOL QUICK REFERENCE DATA s Low threshold voltage VDS = -30 V Fast switching Logic level compatible ID = -0.52 A g Subminiature surface mount package RDS(ON) 0.9 (VGS = -10 V) d GENERAL DESCRIPTION PINNING SOT23 P-channel, enhancement mode, PIN DESCRIPT
bsh205 3.pdf
Philips Semiconductors Product specification P-channel enhancement mode BSH205 MOS transistor FEATURES SYMBOL QUICK REFERENCE DATA s Very low threshold voltage VDS = -12 V Fast switching Logic level compatible ID = -0.75 A g Subminiature surface mount package RDS(ON) 0.5 (VGS = -2.5 V) VGS(TO) 0.4 V d GENERAL DESCRIPTION PINNING SOT23 P-channel, enhan
Otros transistores... BLS7G3135LS-350P , 2SK3408 , BSH103 , BSH105 , BSH108 , BSH111 , BSH114 , BSH121 , CS150N03A8 , BSH202 , BSH203 , BSH205 , BSH207 , BSP030 , BSP100 , BSP110 , BSP122 .
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