BSH201 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BSH201
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.417 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm
   Paquete / Cubierta: TO236AB

Búsqueda de reemplazo de MOSFET BSH201

BSH201 Datasheet (PDF)

..1. Size:118K philips
bsh201 3.pdf

Philips Semiconductors Product specification P-channel enhancement mode BSH201 MOS transistorFEATURES SYMBOL QUICK REFERENCE DATAs Low threshold voltage VDS = -60 V Fast switching Logic level compatible ID = -0.3 Ag Subminiature surface mountpackage RDS(ON) 2.5 (VGS = -10 V)dGENERAL DESCRIPTION PINNING SOT23P-channel, enhancement mode, PIN DESCRIPTI

..2. Size:233K nxp
bsh201.pdf

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

9.1. Size:110K philips
bsh202 3.pdf

Philips Semiconductors Product specification P-channel enhancement mode BSH202 MOS transistorFEATURES SYMBOL QUICK REFERENCE DATAs Low threshold voltage VDS = -30 V Fast switching Logic level compatible ID = -0.52 Ag Subminiature surface mountpackage RDS(ON) 0.9 (VGS = -10 V)dGENERAL DESCRIPTION PINNING SOT23P-channel, enhancement mode, PIN DESCRIPT

9.2. Size:112K philips
bsh205 3.pdf

Philips Semiconductors Product specification P-channel enhancement mode BSH205 MOS transistorFEATURES SYMBOL QUICK REFERENCE DATAs Very low threshold voltage VDS = -12 V Fast switching Logic level compatible ID = -0.75 Ag Subminiature surface mountpackage RDS(ON) 0.5 (VGS = -2.5 V)VGS(TO) 0.4 VdGENERAL DESCRIPTION PINNING SOT23P-channel, enhan

9.3. Size:116K philips
bsh203 3.pdf

Philips Semiconductors Product specification P-channel enhancement mode BSH203 MOS transistorFEATURES SYMBOL QUICK REFERENCE DATAs Very low threshold voltage VDS = -30 V Fast switching Logic level compatible ID = -0.47 Ag Subminiature surface mountpackage RDS(ON) 1.1 (VGS = -2.5 V)VGS(TO) 0.4 VdGENERAL DESCRIPTION PINNING SOT23P-channel, enhan

9.4. Size:117K philips
bsh207 3.pdf

Philips Semiconductors Product specification P-channel enhancement mode BSH207 MOS transistorFEATURES SYMBOL QUICK REFERENCE DATAs Very low threshold voltage VDS = -12 V Fast switching Logic level compatible ID = -1.52 Ag Subminiature surface mountpackage RDS(ON) 0.15 (VGS = -2.5 V)VGS(TO) 0.4 VdGENERAL DESCRIPTION PINNING SOT457P-channel, enh

9.5. Size:112K philips
bsh206 3.pdf

Philips Semiconductors Product specification P-channel enhancement mode BSH206 MOS transistorFEATURES SYMBOL QUICK REFERENCE DATAs Very low threshold voltage VDS = -12 V Fast switching Logic level compatible ID = -0.75 Ag Subminiature surface mountpackage RDS(ON) 0.5 (VGS = -2.5 V)VGS(TO) 0.4 VdGENERAL DESCRIPTION PINNING SOT363P-channel, enha

9.6. Size:276K nxp
bsh205g2.pdf

BSH205G220 V, P-channel Trench MOSFET29 April 2015 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Low threshold voltage Low on-state resistance Trench MOSFET technology Enhanced power di

9.7. Size:225K nxp
bsh202.pdf