BUK6213-30A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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BUK6213-30AN-channel TrenchMOS intermediate level FETRev. 03 2 February 2011 Product data sheet1. Product profile1.1 General descriptionIntermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applicatio

4.1. Size:171K philips
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BUK6213-30CN-channel TrenchMOS intermediate level FETRev. 01 4 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p

8.1. Size:364K philips
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BUK6218-40CN-channel TrenchMOS intermediate level FETRev. 1 4 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical a

8.2. Size:180K philips
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BUK6212-40CN-channel TrenchMOS intermediate level FETRev. 2 21 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critica

8.3. Size:357K philips
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BUK6210-55CN-channel TrenchMOS intermediate level FETRev. 2 4 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe

8.4. Size:201K philips
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BUK6217-55CN-channel TrenchMOS intermediate level FETRev. 02 4 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p

8.5. Size:211K philips
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BUK6211-75CN-channel TrenchMOS FETRev. 02 28 September 2010 Product data sheet1. Product profile1.1 General descriptionStandard and logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performan

8.6. Size:218K philips
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BUK6215-75CN-channel TrenchMOS FETRev. 02 4 October 2010 Product data sheet1. Product profile1.1 General descriptionLogic and standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance

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