BUK624R5-30C Todos los transistores

 ..1. Size:194K  philips
 buk624r5-30c.pdf

BUK624R5-30C N-channel TrenchMOS intermediate level FET Rev. 2 17 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

 8.1. Size:351K  philips
 buk6240-75c.pdf

BUK6240-75C N-channel TrenchMOS FET Rev. 1 27 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automo

 8.2. Size:351K  nxp
 buk6240-75c.pdf

BUK6240-75C N-channel TrenchMOS FET Rev. 1 27 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automo

 9.1. Size:364K  philips
 buk6218-40c.pdf

BUK6218-40C N-channel TrenchMOS intermediate level FET Rev. 1 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical a

 9.2. Size:359K  philips
 buk6209-30c.pdf

BUK6209-30C N-channel TrenchMOS intermediate level FET Rev. 2 1 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe

 9.3. Size:160K  philips
 buk6207-55c.pdf

BUK6207-55C N-channel TrenchMOS intermediate level FET Rev. 2 17 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high

 9.4. Size:180K  philips
 buk6212-40c.pdf

BUK6212-40C N-channel TrenchMOS intermediate level FET Rev. 2 21 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critica

 9.5. Size:196K  philips
 buk6228-55c.pdf

BUK6228-55C N-channel TrenchMOS intermediate level FET Rev. 01 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p

 9.6. Size:363K  philips
 buk6207-30c.pdf

BUK6207-30C N-channel TrenchMOS intermediate level FET Rev. 2 1 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe

 9.7. Size:198K  philips
 buk6226-75c.pdf

BUK6226-75C N-channel TrenchMOS FET Rev. 01 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automo

 9.8. Size:357K  philips
 buk6210-55c.pdf

BUK6210-55C N-channel TrenchMOS intermediate level FET Rev. 2 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe

 9.9. Size:171K  philips
 buk6213-30c.pdf

BUK6213-30C N-channel TrenchMOS intermediate level FET Rev. 01 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p

 9.10. Size:365K  philips
 buk6208-40c.pdf

BUK6208-40C N-channel TrenchMOS intermediate level FET Rev. 3 1 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe

 9.11. Size:201K  philips
 buk6217-55c.pdf

BUK6217-55C N-channel TrenchMOS intermediate level FET Rev. 02 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p

 9.12. Size:211K  philips
 buk6211-75c.pdf

BUK6211-75C N-channel TrenchMOS FET Rev. 02 28 September 2010 Product data sheet 1. Product profile 1.1 General description Standard and logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performan

 9.13. Size:218K  philips
 buk6215-75c.pdf

BUK6215-75C N-channel TrenchMOS FET Rev. 02 4 October 2010 Product data sheet 1. Product profile 1.1 General description Logic and standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance

 9.14. Size:193K  philips
 buk625r0-40c.pdf

BUK625R0-40C N-channel TrenchMOS intermediate level FET Rev. 1 17 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

 9.15. Size:363K  nxp
 buk6207-30c.pdf

BUK6207-30C N-channel TrenchMOS intermediate level FET Rev. 2 1 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe

 9.16. Size:733K  nxp
 buk626r2-40c.pdf

BUK626R2-40C N-channel TrenchMOS intermediate level FET Rev. 1 12 July 2011 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high per

 9.17. Size:365K  nxp
 buk6208-40c.pdf

BUK6208-40C N-channel TrenchMOS intermediate level FET Rev. 3 1 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe

 9.18. Size:695K  nxp
 buk6213-30a.pdf

BUK6213-30A N-channel TrenchMOS intermediate level FET Rev. 03 2 February 2011 Product data sheet 1. Product profile 1.1 General description Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applicatio