BUK652R0-30C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK652R0-30C
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 306 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 16 V
Corriente continua de drenaje |Id|: 120 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.8 V
Carga de la puerta (Qg): 229 nC
Resistencia entre drenaje y fuente RDS(on): 0.0022 Ohm
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de MOSFET BUK652R0-30C
BUK652R0-30C Datasheet (PDF)
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