BUK6E2R0-30C Todos los transistores

 

BUK6E2R0-30C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK6E2R0-30C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 306 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0022 Ohm
   Paquete / Cubierta: I2PAK
 

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BUK6E2R0-30C Datasheet (PDF)

 ..1. Size:181K  philips
 buk6e2r0-30c.pdf pdf_icon

BUK6E2R0-30C

BUK6E2R0-30CN-channel TrenchMOS intermediate level FETRev. 02 7 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

 7.1. Size:373K  philips
 buk6e2r3-40c.pdf pdf_icon

BUK6E2R0-30C

BUK6E2R3-40CN-channel TrenchMOS intermediate level FETRev. 1 18 August 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p

 9.1. Size:350K  philips
 buk6e3r4-40c.pdf pdf_icon

BUK6E2R0-30C

BUK6E3R4-40CN-channel TrenchMOS intermediate level FETRev. 3 14 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high

 9.2. Size:181K  philips
 buk6e3r2-55c.pdf pdf_icon

BUK6E2R0-30C

BUK6E3R2-55CN-channel TrenchMOS intermediate level FETRev. 01 6 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

MOSTRAR MÁS

Otros transistores... BUK663R2-40C , BUK663R5-30C , BUK663R5-55C , BUK663R7-75C , BUK664R4-55C , BUK664R6-40C , BUK664R8-75C , BUK6C1R5-40C , K4145 , BUK6E2R3-40C , BUK6E3R2-55C , BUK6E3R4-40C , BUK6E4R0-75C , BUK7105-40AIE , BUK7105-40ATE , BUK7107-40ATC , BUK7107-55AIE .

History: 2SK3531-01 | BSZ088N03LSG | STS3116E | SVFP12N60CFJD | SVG086R0NT | MDI1752TH | AP18P10AGJ-HF

 

 
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